Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE

InAs thin films with good characteristics were grown on GaAs (0 0 1) substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy indicated that most of the threading dislocations formed by the interaction of misfit dislocations are annihilated above a small thickness. The high electron mobility and small temperature dependence of InAs epilayers are useful for magnetic sensors which is demonstrated by the properties of Hall effect devices.

Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface

We report on high magnetic fields (up to 40 T) cyclotron resonance, quantum Hall effect and Shubnikov-de-Hass measurements in high frequency transistors based on Si-doped GaN-AlGaN heterojunctions. A simple way of precise modelling of the cyclotron absorption in these heterojunctions is presented, We clearly establish two-dimensional electrons to be the dominant conducting carriers and determine precisely their in-plane effective mass to be 0.230 +/- 0.005 of the free electron effective mass. The increase of the effective mass with an increase of two-dimensional carrier density is observed and explained by the nonparabolicity effect. (C) 1997 American Institute of Physics.

高线性度外延及注入GaAs Hall器件

讨论了外延及注入制作的薄层GaAs Hall器件如何获得高的磁线性度。GaAs Hall器件的磁线性度在高磁场下会有偏离，但可以通过外延及注入的过渡层对有源区进行补偿，在合适的有源区和过渡区的浓度和厚度分布中，可以得到在2.5T的强磁场下，±0.04%的高磁线性度。

半绝缘砷化镓Hall测量中的若干问题

建立了绝缘电阻大于10~(13)Ω和温度起伏小于0.1℃的半绝缘砷化镓Hall测量装置。研究了环境温度、湿度、漏电流、数据读取时间、测量电压、样品尺寸等因素对电阻率与迁移率的影响，并讨论了各种因素所引起的测量误差。

MBE生长的InAs薄膜Hall器件

利用GaAs衬底上的InAa薄膜制备的Hall器件，具有灵敏度高(在相同的电子浓度、室温附近灵敏度是GaAs Hall器件的1.5倍)，不等位电压温漂小等优点。可用于电流传感器、无刷电机等磁敏传感器中，具有广阔的应用前景。

InAs薄膜Hall器件

于2010-11-23批量导入

InAs薄膜Hall器件的材料生长与特性研究

报道了利用InAs外延薄膜制作霍尔器件，通过分子束外延技术在GaAs衬底上生长的InAs薄膜具有较高的迁移率和较好的温度特性。用这种材料制作的霍尔器件在每千欧姆内阻条件下灵敏度与GaAs平面Hall器件相比提高了50%。

X(3915) and X(4350) as New Members in the P-Wave Charmonium Family

The analysis of the mass spectrum and the calculation of the strong decay of P-wave charmonium states strongly purport to explain the newly observed X(3915) and X(4350) as new members in the P-wave charmonium family, i.e., chi'(c0) for X(3915) and chi ''(c2) for X(4350). Under the P-wave charmonium assignment to X(3915) and X(4350), the J(PC) quantum numbers of X(3915) and X(4350) must be 0(++) and 2(++) respectively, which provide important criteria to test the P-wave charmonium explanation for X(3915) and X(4350) proposed by this Letter. The decay behavior of the remaining two P-wave charmonium states with the second radial excitation is predicted, and an experimental search for them is suggested.

A 3 Tesla Superconducting Magnet for Hall Sensor Calibration

A 3 T superconducting magnet with a 70 mm diameter warm bore and energy storage of 47 kJ has been successfully fabricated and tested, which can be used to calibrate Hall sensors in high magnetic field as well as conduct superconducting experiments. The magnet consists of three solenoid coils and an iron yoke. The homogeneity of the magnetic field in the region of interest (ROI) is +/- 6.0 x 10(-5). The coils of the magnet were fabricated with NbTi-Cu superconducting wire and the stray magnetic field is shielded by an iron yoke. The coils and yoke are fully immersed in a helium vessel. The optimized structural design, stress and quench simulation, fabrication and test results are presented in this paper.