Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface
Data(s) |
1997
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Resumo |
We report on high magnetic fields (up to 40 T) cyclotron resonance, quantum Hall effect and Shubnikov-de-Hass measurements in high frequency transistors based on Si-doped GaN-AlGaN heterojunctions. A simple way of precise modelling of the cyclotron absorption in these heterojunctions is presented, We clearly establish two-dimensional electrons to be the dominant conducting carriers and determine precisely their in-plane effective mass to be 0.230 +/- 0.005 of the free electron effective mass. The increase of the effective mass with an increase of two-dimensional carrier density is observed and explained by the nonparabolicity effect. (C) 1997 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Knap W; Contreras S; Alause H; Skierbiszewski C; Camassel J; Dyakonov M; Robert JL; Yang J; Chen Q; Khan MA; Sadowski ML; Huant S; Yang FH; Goiran M; Leotin J; Shur MS .Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface ,APPLIED PHYSICS LETTERS ,1997,70(16):2123-2125 |
Palavras-Chave | #半导体物理 |
Tipo |
期刊论文 |