Thermogravimetric study on the hydration of reactive magnesia and silica mixture at room temperature

The synthesis of magnesium silicate hydrate (MSH), which has wide applications in both construction and environmental fields, has been studied for decades. However, it is known that the characteristics of magnesia (MgO) vary significantly depending on their calcination conditions, which is expected to affect their performance in the MgO-SiO2-H2O system. This paper investigated the effect of different MgO and silica sources on the formation of magnesium silicate hydrate (MSH) at room temperature. The hydration process was studied by mixing commercial reactive MgO and silica powders with water and curing for 1, 7 and 28 days. The hydration products were analysed with the help of X-ray diffraction (XRD) and thermogravimatric analysis (TGA). The results showed the continuous consumption of MgO and the existence of MSH and brucite and other minor phases such as magnesite and calcite. It is found that the Mg and Si sources have significant effect on the hydration process of MgO-SiO2-H2O system. The reaction degree is controlled by the availability of dissolved Mg and Si in the solution. The former is determined by the reactivity of MgO and the latter is related to the reactivity of the silica as well as the pH of the system. © 2013 Elsevier B.V. All rights reserved.

Impact of hydrated magnesium carbonate additives on the carbonation of reactive MgO cements

Reactive magnesia (MgO) cements have emerged as a potentially more sustainable and technically superior alternative to Portland cement due to their lower production temperature and ability to sequester significant quantities of CO2. Porous blocks containing MgO were found to achieve higher strength values than PC blocks. A number of variables are investigated to achieve maximum carbonation and associated high strengths. This paper focuses on the impact of four different hydrated magnesium carbonates (HMCs) as cement replacements of either 20 or 50%. Accelerated carbonation (20 C, 70-90% RH, 20% CO2) is compared with natural curing (20 C, 60-70% RH, ambient CO2). SEM, TG/DTA, XRD, and HCl acid digestion are utilized to provide a thorough understanding of the performance of MgO-cement porous blocks. The presence of HMCs resulted in the formation of larger size carbonation products with a different morphology than those in the control mix, leading to significantly enhanced carbonation and strength. © 2013 Elsevier Ltd.

A highly conductive and transparent solution processed AZO/MWCNT nanocomposite

A solution processed aluminum-doped zinc oxide (AZO)/multi-walled carbon nanotube (MWCNT) nanocomposite thin film has been developed offering simultaneously high optical transparency and low electrical resistivity, with a conductivity figure of merit (σDC/σopt) of ~75-better than PEDOT:PSS and many graphene derivatives. The reduction in sheet resistance of thin films of pristine MWCNTs is attributed to an increase in the conduction pathways within the sol-gel derived AZO matrix and reduced inter-MWCNT contact resistance. Films have been extensively characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), X-ray diffractometry (XRD), photoluminescence (PL), and ultraviolet-visible (UV-vis) spectroscopy. © 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Characterization of light and heavy hydrated magnesium carbonates using thermal analysis

Upon heating, hydrated magnesium carbonates (HMCs) undergo a continuous sequence of decomposition reactions. This study aims to investigate the thermal decomposition of various commercially produced HMCs classified as light and heavy, highlight their differences, and provide an insight into their compositions in accordance with the results obtained from thermal analysis and microstructure studies. An understanding of the chemical compositions and microstructures, and a better knowledge of the reactions that take place during the decomposition of HMCs were achieved through the use of SEM, XRD, and TG/differential thermal analysis (DTA). The quantification of their CO 2 contents was provided by TG and dissolving the samples in HCl acid. Results show that variations exist within the microstructure and decomposition patterns of the two groups of HMCs, which do not exactly fit into the fixed stoichiometry of the known HMCs in the MgO-CO2-H2O system. The occurrence of an exothermic DTA peak was only observed for the heavy HMCs, which was attributed to their high CO2 contents and the relatively delayed decomposition pattern. © 2013 Akadémiai Kiadó, Budapest, Hungary.

Properties of two model soils stabilized with different blends and contents of GGBS, MgO, lime, and PC

This paper addresses the use of ground granulated blast furnace slag (GGBS) and reactive magnesia (MgO) blends for soil stabilization, comparing them with GGBS-lime blends and Portland cement (PC) for enhanced technical performance. A range of tests were conducted to investigate the properties of stabilized soils, including unconfined compressive strength (UCS), permeability, and microstructural analyses by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The influence of GGBS:MgO ratio, binder content, soil type, and curing period were addressed. The UCS results revealed that GGBS-MgO was more efficient than GGBS-lime as a binder for soil stabilization, with an optimum MgO content in the range of 5-20% of the blends content, varying with binder content and curing age. The 28-day UCS values of the optimum GGBS-MgO mixes were up to almost four times higher than that of corresponding PC mixes. The microstructural analyses showed the hydrotalcite was produced during the GGBS hydration activated by MgO, although the main hydration products of the GGBS-MgO stabilized soils were similar to those of PC. © 2014 American Society of Civil Engineers.

Progress in the understanding of Ni silicide formation for advanced MOS structures

Metallic silicides have been used as contact materials on source/drain and gate in metal-oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed in recent technologies since Pt allows to stabilize NiSi at high temperature. The presence of Pt and the very low thickness (<10 nm) needed for the device contacts bring new concerns for actual devices. In this work, in situ techniques [X-ray diffraction (XRD), X-ray reflectivity (XRR), sheet resistance, differential scanning calorimetry (DSC)] were combined with atom probe tomography (APT) to study the formation mechanisms as well as the redistribution of dopants and alloy elements (Pt, Pd.) during the silicide formation. Phenomena like nucleation, lateral growth, interfacial reaction, diffusion, precipitation, and transient phase formation are investigated. The effect of alloy elements (Pt, Pd.) and dopants (As, B.) as well as stress and defects induced by the confinement in devices on the silicide formation mechanism and alloying element redistribution is examined. In particular APT has been performed for the three-dimensional (3D) analysis of MOSFET at the atomic scale. The advances in the understanding of the mechanisms of formation and redistribution are discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhancing the carbonation of MgO cement porous blocks through improved curing conditions

The use of reactive magnesia (MgO) as the binder in porous blocks demonstrated significant advantages due to its low production temperatures and ability to carbonate, leading to significant strengths. This paper investigates the enhancement of the carbonation process through different curing conditions: water to cement ratio (0.6-0.9), CO2 concentration (5-20%), curing duration (1-7 days), relative humidity (55-98%), and wet/dry cycling frequency (every 0-3 days), improving the carbonation potential through increased amounts of CO2 absorbed and enhanced mechanical performance. UCS results were supported with SEM, XRD, and HCl acid digestion analyses. The results show that CO2 concentrations as low as 5% can produce the required strengths after only 1 day. Drier mixes perform better in shorter curing durations, whereas larger w/c ratios are needed for continuous carbonation. Mixes subjected to 78% RH outperformed all the others, also highlighting the benefits of incorporating wet/dry cycling to induce carbonation. © 2014 Elsevier Ltd.

Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni(10 at.% Pt) film with Si(1 0 0) substrate

The reaction between an 11 nm Ni(10 at.% Pt) film on a Si substrate has been examined by in situ X-ray diffraction (XRD), atom probe tomography (APT) and transmission electron microscopy (TEM). In situ XRD experiments show the unusual formation of a phase without an XRD peak through consumption of the metal. According to APT, this phase has an Si concentration gradient in accordance with the θ-Ni2Si metastable phase. TEM analysis confirms the direct formation of θ-Ni2Si in epitaxy on Si(1 0 0) with two variants of the epitaxial relationship. © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.

Ferromagnetic modification of GaN film by Cu+ ions implantation

The structural and magnetic properties of Cu+ ions-implanted GaN films have been reported. Eighty kilo-electron-volt Cu+ ions were implanted into n-type GaN film at room temperature with fluences ranging from 1 x 10(16) to 8 x 10(16) cm(-2) and subsequently annealed at 800 degrees C for 1 h in N-2 ambient. PIXE was employed to determine the Cu-implanted content. The magnetic property was measured by the Quantum Design MPMS SQUID magnetometer. No secondary phases or clusters were detected within the sensitivity of XRD. Raman spectrum measurement showed that the Cu ions incorporated into the crystal lattice positions of GaN through substitution of Ga atoms. Apparent ferromagnetic hysteresis loops measured at 10 K were presented. The experimental result showed that the ferromagnetic signal strongly increased with Cu-implanted fluence from 1 x 10(16) to 8 x 10(16) cm(-2).

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.

Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at similar to 0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films with a subsequent rapid thermal annealing (RTA) process. The structure, morphology and magnetic characteristics of the samples were investigated by means of high-resolution x-ray diffraction (XRD), atomic force microscopy (AFM) and a superconducting quantum interference device (SQUID), respectively. The XRD analysis shows that the RTA process can effectively recover the crystal deterioration caused by the implantation process and that there is no obvious change in the lattice parameter for the as-annealed sample. The SQUID result indicates that the as-annealed sample shows ferromagnetic properties and magnetic anisotropy at room temperature.

Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm x 5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 mu m and a gate width of 60 mu m demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 mu A/mm at the gate voltage of -10 V. (C) 2008 Published by Elsevier Ltd.

The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microscopy (SEM) and X-Ray Diffraction (XRD) were employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). In addition, wet etching method was used to evaluate the defect of the GaN epilayer. The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness, interlayer number and growth temperature of the LT AlN interlayer. With the optimized LT AlN interlayer structures, high quality GaN epilayers with a low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.