Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm x 5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 mu m and a gate width of 60 mu m demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 mu A/mm at the gate voltage of -10 V. (C) 2008 Published by Elsevier Ltd.

Chinese Academy of Sciences KGCX2-SW-107-1 National Natural Science Foundation of China 60606002 Special Funds for Major State Basic Research Projects 2002CB311903 2006CB604905 513270605This work has been supported by the Key Innovation Program of the Chinese Academy of Sciences (no. KGCX2-SW-107-1), National Natural Science Foundation of China (no. 60606002) and Special Funds for Major State Basic Research Projects (nos. 2002CB311903, 2006CB604905 and 513270605).