Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.

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Made available in DSpace on 2010-05-04T14:12:23Z (GMT). No. of bitstreams: 1 Impact of thickness of GaN buffer layer on properties of AlNGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition.pdf: 667812 bytes, checksum: b5bde8478388dfeabc9ab3b468c6fca3 (MD5) Previous issue date: 2010

National Hi-Tech Research and Development Program of China 2006AA03Z409

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National Hi-Tech Research and Development Program of China 2006AA03Z409