Ferromagnetic modification of GaN film by Cu+ ions implantation

The structural and magnetic properties of Cu+ ions-implanted GaN films have been reported. Eighty kilo-electron-volt Cu+ ions were implanted into n-type GaN film at room temperature with fluences ranging from 1 x 10(16) to 8 x 10(16) cm(-2) and subsequently annealed at 800 degrees C for 1 h in N-2 ambient. PIXE was employed to determine the Cu-implanted content. The magnetic property was measured by the Quantum Design MPMS SQUID magnetometer. No secondary phases or clusters were detected within the sensitivity of XRD. Raman spectrum measurement showed that the Cu ions incorporated into the crystal lattice positions of GaN through substitution of Ga atoms. Apparent ferromagnetic hysteresis loops measured at 10 K were presented. The experimental result showed that the ferromagnetic signal strongly increased with Cu-implanted fluence from 1 x 10(16) to 8 x 10(16) cm(-2).

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Made available in DSpace on 2010-04-22T13:38:26Z (GMT). No. of bitstreams: 1 Ferromagnetic modification of GaN film by Cu+ ions implantation.pdf: 690154 bytes, checksum: 2e77174e4eae88f6078676f023d543c4 (MD5) Previous issue date: 2010

National Natural Science Foundation of China 10775033； Fund of Fudan University； Shanghai Leading Academic Discipline Project B107

国内

National Natural Science Foundation of China 10775033； Fund of Fudan University； Shanghai Leading Academic Discipline Project B107