Steel and aluminium in a low carbon future

Production of steel and aluminium creates 10% of global carbon emissions from energy and processes. Demand is likely to double by 2050, but climate scientists are recommending absolute reductions of at least 50% and these are Increasingly entering law. How can reductions of this order happen? Only 10-20% savings can be expected in liquid metal production, so the primary industry is pursuing carbon sequestration as the main solution. However, this Is as yet unproven at scale, and as well as carrying some risk, the capital and operating costs are likely to be high, but are as yet unknown. In parallel with these strategies we can also examine whether we can reduce demand for liquid metal. 'Material efficiency' may allow delivery of existing services with less requirement for metal, for instance through designing products that use less metal, reducing process scrap, diverting scrap for other use, re-using components or delaying end of life. Overall demand reduction could occur if goods were used more intensely, alternative means were used to deliver the same services, or total demand were constrained. The paper analyses all possible options, to define and evaluate scenarios that meet the 2050 target, and discuss the steps required to bring them about. The paper concludes with suggestions for key areas where future research In metal forming can support a future low carbon economy. © 2011 Wiley-VCH Verlag GmbH & Co. KGaA. Weinheim.

Magnetic characterisation of large grain, bulk Y-Ba-Cu-O superconductor-soft ferromagnetic alloy hybrid structures

Large grain, bulk Y-Ba-Cu-O (YBCO) high temperature superconductors (HTS) have significant potential for use in a variety of practical applications that incorporate powerful quasi-permanent magnets. In the present work, we investigate how the trapped field of such magnets can be improved by combining bulk YBCO with a soft FeNi, ferromagnetic alloy. This involves machining the alloy into components of various shapes, such as cylinders and rings, which are attached subsequently to the top surface of a solid, bulk HTS cylinder. The effect of these modifications on the magnetic hysteresis curve and trapped field of the bulk superconductor at 77 K are then studied using pick-up coil and Hall probe measurements. The experimental data are compared to finite element modelling of the magnetic flux distribution using Campbell's algorithm. Initially we establish the validity of the technique involving pick-up coils wrapped around the bulk superconductor to obtain its magnetic hysteresis curve in a non-destructive way and highlight the difference between the measured signal and the true magnetization of the sample. We then consider the properties of hybrid ferromagnet/superconductor (F/S) structures. Hall probe measurements, together with the results of the model, establish that flux lines curve outwards through the ferromagnet, which acts, effectively, like a magnetic short circuit. Magnetic hysteresis curves show that the effects of the superconductor and the ferromagnet simply add when the ferromagnet is saturated fully by the applied field. The trapped field of the hybrid structure is always larger than that of the superconductor alone below this saturation level, and especially when the applied field is removed. The results of the study show further that the beneficial effects on the trapped field are enhanced when the ferromagnet covers the entire surface of the superconductor for different ferromagnetic components of various shapes and fixed volume. © 2014 Elsevier B.V. All rights reserved.

Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

A new method is demonstrated to be effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks by inserting InAlGaN interlayers during the growth of GaN upon Si (1 1 1) substrate. Compared with GaN film without quaternary interlayer, GaN layer grown on InAlGaN compliant layers shows a five times brighter integrated PL intensity and a (0 0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 18 arcmin. Its chi(min), derived from Rutherford backscattering spectrometry (RBS), is about 2.0%, which means that the crystalline quality of this layer is very good. Quaternary InAlGaN layers, which are used as buffer layers firstly, can play a compliant role to endure the large mismatch-induced stress and reduce cracks during the growth of GaN epitaxy. The mechanisms leading to crack density reduction are investigated and results show that the phase immiscibility and the weak In-N bond make interlayer to offer tenability in the lattice parameters and release the thermal stress. (c) 2005 Elsevier B.V. All rights reserved.

Sulfur-induced exciton localization in Te-rich ZnSTe alloy

Exciton localization in Te-rich ZnSTe epilayers has been studied by photoluminescence (PL) and time-resolved PL. The sulfur-related exciton emission is found to dominate the radiative recombination at low temperature and is shifted to the low energy with the increase of S concentration. By measuring the PL dependence on temperature and by analyzing the PL decay process, we have clarified the localization nature of the sulfur-related exciton emission. Furthermore, the difference of the localization effect in Te- and S-rich ZnSTe is also compared and discussed. © 2005 American Institute of Physics.

Optical properties of alloy states in GaNxAs1-x (x < 0.01)

A set of GaNxAs1-x samples with a small content of nitrogen (N) (< 1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and photo reflectance technology. Temperature-and excitation-dependence of PL disclosed the intrinsic band gap properties of alloy states in GaNxAs1-x, which was extremely different from the N-related impurity states. At the same time, PR spectra were also studied in this work.

Pressure behavior of the alloy band edge and nitrogen-related centers in GaAs0.999N0.001

The photoluminescence of a GaAsN alloy with 0.1% nitrogen has been studied under pressures up to 8.5 GPa at 33, 70, and 130 K. At ambient pressure, emissions from both the GaAsN alloy conduction band edge and discrete nitrogen-related bound states are observed. Under applied pressure, these two types of emissions shift with rather different pressure coefficients: about 40 meV/GPa for the nitrogen-related features, and about 80 meV/GPa for the alloy band-edge emission. Beyond 1 GPa, these discrete nitrogen-related peaks broaden and evolve into a broad band. Three new photoluminescence bands emerge on the high-energy side of the broad band, when the pressure is above 2.5, 4.5, and 5.25 GPa, respectively, at 33 K. In view of their relative energy positions and pressure behavior, we have attributed these new emissions to the nitrogen-pair states NN3 and NN4, and the isolated nitrogen state N-x. In addition, we have attributed the high-energy component of the broad band formed above 1 GPa to resonant or near-resonant NN1 and NN2, and its main body to deeper cluster centers involving more than two nitrogen atoms. This study reveals the persistence of all the paired and isolated nitrogen-related impurity states, previously observed only in the dilute doping limit, into a rather high doping level. Additionally, we find that the responses of different N-related states to varying N-doping levels differ significantly and in a nontrivial manner.

Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001)

Thickness effect of immiscible alloy InAlAs as matrix layer on the morphology of InAs nanostructure grown on InAlAs/InP (0 0 1) by solid-source molecular-beam epitaxy has been studied. Experiments demonstrate that InAs nanostructure grown on thin InAlAs matrix layer forms randomly distributed quantum dot, whereas, grown on thick InAlAs matrix layer forms one-dimension ordered mixture of quantum wire and quantum dot. This drastic modification in the nanostructure morphology is attributed to the generation of composition modulation in the immiscible InAlAs alloy with the increase of the layer thickness. (C) 2004 Elsevier B.V. All rights reserved.

Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition

Crack-free In0.08Al0.25Ga0.67N quaternary films, with and without thick (> 1.5 mum) high-temperature-GaN (HTGaN) interlayer, have been grown on Si(1 1 1) substrates by a low-pressure metalorganic chemical vapor deposition (MOCVD) system. Mole fractions of In and Al in quaternary alloy layers are determined by Energy dispersive spectroscopy (EDS) and Rutherford backscattering spectrometry (RBS), which are recorded as similar to8% and similar to25-27%, respectively. High-resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RT-PL) results evidence the film's single crystal structure and the existence of local In- and/or Al-rich regions. Compared with GaN film grwon on Si(1 1 1) substrate, no crack is observed in the quaternary ones. Two explanations are proposed. First, mismatch-induced strain is relaxed significantly due to gradual changes of In concentration. Second, the weak In-N bond is likely to break when the sample is cooled down to the room temperature, which is expected to favor the releasing of thermal stress. (C) 2004 Elsevier B.V. All rights reserved.

Alloy compositional fluctuation in InAlGaN epitaxial films

The quaternary InAlGaN films were grown by metal-organic vapor phase epitaxy (MOVPE) at various temperatures and the optical and structural properties of the quaternary films were investigated by temperature-dependent photoluminescence (PL), high-resolution X-ray diffraction (HRXRD) and high-resolution electron microscopy (HREM). The results show that the temperature-dependent PL intensity of the InAlGaN film is similar to that of the disordered alloys, which is thought to be due to local alloy compositional fluctuations (ACF) in the epilayer. HRXRD measurement reveals there are In-rich and In-poor phases in the film and HREM observation, on the other hand, demonstrates that nanoclusters formed in the epilayer. Therefore the experimental results support the existence of ACF in the epilayers.

Metal alloy and monoelemental nanoclusters in silica formed by sequential ion implantation and annealing in selected atmosphere

The preparation of metal alloy and monoelemental nanoclusters in silica by Ag, Cu ion sequential implantation and annealing in selected oxidizing or reducing atmosphere is studied. The formation of metastable Ag-Cu alloy is verified in the as-implanted samples by optical absorption spectra, selected area electron diffraction and energy dispersive spectrometer spectrum. The alloy is discomposed at elevated annealing temperature in both oxidizing and reducing atmospheres. The different effects of annealing behaviors on the Ag Cu alloy nanoclusters are investigated. (C) 2004 Elsevier B.V. All rights reserved.

A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors

Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Omega scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002) AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nn. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

Unusual carrier thermalization in a dilute GaAs1-xNx alloy

Photoluminescence (PL) properties of the E-0, E-0+Delta(0), and E+ bands in an x=0.62% GaAs1-xNx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-PL. The hot electrons within the E+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its PL peak energy by >2k(B)T, suggesting peculiar density of states and carrier dynamics of the E+ band.

Aluminium doping induced enhancement of p-d coupling in ZnO

Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the 0 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and 0 K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.