Unusual carrier thermalization in a dilute GaAs1-xNx alloy
| Data(s) |
2007
|
|---|---|
| Resumo |
Photoluminescence (PL) properties of the E-0, E-0+Delta(0), and E+ bands in an x=0.62% GaAs1-xNx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-PL. The hot electrons within the E+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its PL peak energy by >2k(B)T, suggesting peculiar density of states and carrier dynamics of the E+ band. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Tan, PH (Tan, P. H.); Xu, ZY (Xu, Z. Y.); Luo, XD (Luo, X. D.); Ge, WK (Ge, W. K.); Zhang, Y (Zhang, Y.); Mascarenhas, A (Mascarenhas, A.); Xin, HP (Xin, H. P.); Tu, CW (Tu, C. W.) .Unusual carrier thermalization in a dilute GaAs1-xNx alloy ,APPLIED PHYSICS LETTERS,FEB 5 2007,90 (6):Art.No.061905 |
| Palavras-Chave | #半导体物理 #PHOTOLUMINESCENCE |
| Tipo |
期刊论文 |
