Optical properties of alloy states in GaNxAs1-x (x < 0.01)
| Data(s) |
2005
|
|---|---|
| Resumo |
A set of GaNxAs1-x samples with a small content of nitrogen (N) (< 1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and photo reflectance technology. Temperature-and excitation-dependence of PL disclosed the intrinsic band gap properties of alloy states in GaNxAs1-x, which was extremely different from the N-related impurity states. At the same time, PR spectra were also studied in this work. |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
Luo, XD; Sun, BH; Xu, ZY .Optical properties of alloy states in GaNxAs1-x (x < 0.01) ,ACTA PHYSICA SINICA,MAY 2005,54 (5):2385-2388 |
| Palavras-Chave | #半导体物理 #GaNxAs1-x |
| Tipo |
期刊论文 |
