Aluminium doping induced enhancement of p-d coupling in ZnO


Autoria(s): Cong GW; Peng WQ; Wei HY; Liu XL; Wu JJ; Han XX; Zhu QS; Wang ZG; Ye ZZ; Lu JG; Zhu LP; Qian HJ; Su R; Hong CH; Zhong J; Ibrahim K; Hu TD
Data(s)

2006

Resumo

Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the 0 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and 0 K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.

Identificador

http://ir.semi.ac.cn/handle/172111/10696

http://www.irgrid.ac.cn/handle/1471x/64544

Idioma(s)

英语

Fonte

Cong GW; Peng WQ; Wei HY; Liu XL; Wu JJ; Han XX; Zhu QS; Wang ZG; Ye ZZ; Lu JG; Zhu LP; Qian HJ; Su R; Hong CH; Zhong J; Ibrahim K; Hu TD .Aluminium doping induced enhancement of p-d coupling in ZnO ,JOURNAL OF PHYSICS-CONDENSED MATTER,2006,18(11):3081-3087

Palavras-Chave #半导体材料 #ELECTRONIC-STRUCTURE CALCULATIONS #II-VI SEMICONDUCTORS #THIN-FILMS #PHOTOELECTRON-SPECTROSCOPY #DOPED ZNO #1ST-PRINCIPLES #CONDUCTION #STATES
Tipo

期刊论文