Lineshape Analysis of the Beat Signal Between Optical Carrier and Delayed Sidebands

This paper presents the lineshape analysis of the beat signal between the optical carrier and the shifted and delayed side-bands produced by sinusoidal amplitude modulation. It is shown that the beat signal has a typical lineshape with a very narrow delta-peak superposed on a quasi-Lorentzian profile. Theoretical explanation for the appearance of this peak has been given based on optical spectral structure constructed by a large number of optical wave trains. It is predicted that the delta-peak is originated from the beat between the wave trains in the carrier and those in the delayed sidebands when their average coherence length is longer than the delay line. Experiments carried out using different delay lines clearly show that the delta-peak is always located at the modulation frequency and decreases with the increasing delay line. Our analysis explicitly indicates that the linewidth is related to the observation time. It is also suggested that the disappearance of the delta-peak can be used as the criterion of coherence elimination.

Analysis of coupled microcircular resonators coupled to a bus waveguide with high output efficiency

Coupled microcircular resonators tangentially coupled to a bus waveguide, which is between the resonators, are numerically investigated by the finite-difference time-domain technique. For symmetrically coupled microcircular resonators with refractive index of 3.2, radius of 2 mu m, and width of the bus waveguide of 0.4 mu m, a mode Q factor of the order of 105 is obtained for a mode at the frequency of 243 THz. An output coupling efficiency of as high as 0.99 is calculated for a mode with a Q factor ranging from 10(3) to 10(4). The mode Q factor is 2 orders larger than that of the modes confined in a single circular resonator tangentially coupled to the same bus waveguide. Furthermore, the high Q traveling modes in the coupled microcircular resonators are suitable for optical single processing.

An ultra-low power CMOS random number generator

This paper proposes an ultra-low power CMOS random number generator (RING), which is based on an oscillator-sampling architecture. The noisy oscillator consists of a dual-drain MOS transistor, a noise generator and a voltage control oscillator. The dual-drain MOS transistor can bring extra-noise to the drain current or the output voltage so that the jitter of the oscillator is much larger than the normal oscillator. The frequency division ratio of the high-frequency sampling oscillator and the noisy oscillator is small. The RNG has been fabricated in a 0.35 mu m CMOS process. It can produce good quality bit streams without any post-processing. The bit rate of this RNG could be as high as 100 kbps. It has a typical ultra-low power dissipation of 0.91 mu W. This novel circuit is a promising unit for low power system and communication applications. (c) 2007 Elsevier Ltd. All rights reserved.

Analysis of chirp characteristics of DFB lasers and integrated laser-modulators

A new method of analyzing the chirp characteristics of directly modulated lasers and integrated laser-modulators is presented in this paper. Phase-circuit has been introduced into the circuit model of distributed feedback (DFB) lasers in the analysis. Therefore, the chirp characteristics of the device can be obtained by simulating the modified circuit model. The simulation results agree well with the published data. Furthermore, this modified model is combined with the circuit model of electroabsorption (EA) modulators to simulate the chirp characteristics of the monolithic integration of a DFB laser and an EA modulator. The simulation is focused on the dependence of the frequency chirp of the integrated device on the isolation resistance between laser and modulator. Much lower chirp can be seen in the integrated lightwave source compared to the directly modulated laser.

Measurement of chirp parameter and modulation index of a semiconductor laser based on optical spectrum analysis

A novel and simple method for measuring the chirp parameter, frequency, and intensity modulation indexes of directly modulated lasers is proposed in a small-signal modulation scheme. A graphical approach is presented. An analytical solution to the measurement of low chirp parameters is also given. The measured results agree well with those obtained using the conventional methods.

Potential frequency bandwidth estimation of TO packaging techniques for photodiode modules

Scattering parameters of photodiode chip, TO header and TO packaged module are measured, and the effects of TO packaging network on the high-frequency response of photodiode are investigated. Based on the analysis, the potential bandwidth of TO packaging techniques is estimated from the scattering parameters of the TO packaging network. Another method for estimating the potential bandwidth from the equivalent circuit for the TO packaged photodiode model is also presented. The results obtained using both methods show that the TO packaging techniques used in the experiments can potentially achieve a frequency bandwidth of 22 GHz.

Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors

The principle of high-electron-mobility transistor (HEMT) and the property of two-dimensional electron gas (2DEG) have been analyzed theoretically. The concentration and distribution of 2DEG in various channel layers are calculated by numerical method. Variation of 2DEG concentration in different subband of the quantum well is discussed in detail. Calculated results show that sheet electron concentration of 2DEG in the channel is affected slightly by the thickness of the channel. But the proportion of electrons inhabited in different subbands can be affected by the thickness of the channel. When the size of channel lies between 20-25 nm, the number of electrons occupying the second subband reaches the maximum. This result can be used in parameter design of materials and devices.

Chiral symmetry analysis and rigid rotational invariance for the lattice dynamics of single-wall carbon nanotubes

We provide a detailed expression of the vibrational potential for the lattice dynamics of single-wall carbon nanotubes (SWCNT's) satisfying the requirements of the exact rigid translational as well as rotational symmetries, which is a nontrivial generalization of the valence force model for the planar graphene sheet. With the model, the low-frequency behavior of the dispersion of the acoustic modes as well as the flexure mode can be precisely calculated. Based upon a comprehensive chiral symmetry analysis, the calculated mode frequencies (including all the Raman- and infrared-active modes), velocities of acoustic modes, and the polarization vectors are systematically fitted in terms of the chiral angle and radius, where the restrictions of various symmetry operations of SWCNT's are fulfilled.

Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique

The mode frequency and the quality factor of nanowire cavities are calculated from the intensity spectrum obtained by the finite-difference time-domain (FDTD) technique and the Pade approximation. In a free-standing nanowire cavity with dielectric constant epsilon = 6.0 and a length of 5 mu m, quality factors of 130, 159, and 151 are obtained for the HE11 modes with a wavelength around 375 nm, at cavity radius of 60, 75, and 90 nm, respectively. The corresponding quality factors reduce to 78, 94, and 86 for a nanowire cavity standing on a sapphire substrate with a refractive index of 1.8. The mode quality factors are also calculated for the TE01 and TM01 modes, and the mode reflectivities are calculated from the mode quality factors.

Analysis and numerical simulation of eigenmode characteristics for semiconductor lasers with an equilateral triangle micro-resonator

The eigenmodes confined in the equilateral triangle resonator (ETR) are analyzed by deriving the eigenvalues and the mode field distributions and by the finite difference time domain (FDTD) technique. The analytical results show that the one-period-length for the mode light rays inside the ETR is the perimeter of the ETR, and the number of transverse modes is limited by the condition of total internal reflection. In addition, the sum of the longitudinal mode index and the transverse mode index should be an even number, which limits the number of confined modes again. Based on the FDTD technique and the Pade approximation, we calculate the mode resonant frequencies and the quality factors from the local maximum and the width of the spectral distribution of the intensity The numerical results of mode frequencies agree very well with the analytical results, and the quality factor of the fundamental mode is usually higher than that of the higher order transverse modes. The results show that the ETR is suitable to realize single-made operation as semiconductor microcavity lasers.

Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers

We have investigated the photoluminescence (PL) properties of nitrogen-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen radio frequency-plasma source. The PL data shows that the relative intensity of the donor-bound exciton (I-2) emission to the acceptor-bound exciton (I-1) emission strongly depends on both the excitation power and the temperature. This result is explained by a thermalization model of the bound exciton which involved in the capture and emission between the neutral donor bound exciton, the neutral acceptor bound exciton and the free exciton. Quantitative analysis with the proposed mechanism is in good agreement with the experimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)09102-1].

An Embedded Ultra Low Power Nonvolatile Memory in a Standard CMOS Logic Process

This paper proposes an embedded ultra low power nonvolatile memory in a standard CMOS logic process. The memory adopts a bit cell based on the differential floating gate PMOS structure and a novel operating scheme. It can greatly improve the endurance and retention characteristic and make the area/bit smaller. A new high efficiency all-PMOS charge pump is designed to reduce the power consumption and to increase the power efficiency. It eliminates the body effect and can generate higher output voltage than conventional structures for a same stage number. A 32-bit prototype chip is fabricated in a 0.18 mu m 1P4M standard CMOS logic process and the core area is 0.06 mm(2). The measured results indicate that the typical write/erase time is 10ms. With a 700 kHz clock frequency, power consumption of the whole memory is 2.3 mu A for program and 1.2 mu A for read at a 1.6V power supply.

An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags

An ultra low power non-volatile memory is designed in a standard CMOS process for passive RFID tags. The memory can operate in a new low power operating scheme under a wide supply voltage and clock frequency range. In the charge pump circuit the threshold voltage effect of the switch transistor is almost eliminated and the pumping efficiency of the circuit is improved. An ultra low power 192-bit memory with a register array is implemented in a 0.18 mu M standard CMOS process. The measured results indicate that, for the supply voltage of 1.2 volts and the clock frequency of 780KHz, the current consumption of the memory is 1.8 mu A (3.6 mu A) at the read (write) rate of 1.3Mb/s (0.8Kb/s).

Ultrasensitive Detection of Infrared Photon Using Microcantilever: Theoretical Analysis

We present a new method for detecting near-infrared, mid-infrared, and far-infrared photons with an ultra-high sensitivity. The infrared photon detection was carried out by monitoring the displacement change of a vibrating microcantilever under light pressure using a laser Doppler vibrometer. Ultrathin silicon cantilevers with high sensitivity were produced using micro/nano-fabrication technology. The photon detection system was set up. The response of the microcantilever to the photon illumination is theoretically estimated, and a nanowatt resolution for the infrared photon detection is expected at room temperature with this method.