Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers


Autoria(s): Zhu ZM; Li GH; Liu NZ; Wang SZ; Han HX; Wang ZP
Data(s)

1999

Resumo

We have investigated the photoluminescence (PL) properties of nitrogen-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen radio frequency-plasma source. The PL data shows that the relative intensity of the donor-bound exciton (I-2) emission to the acceptor-bound exciton (I-1) emission strongly depends on both the excitation power and the temperature. This result is explained by a thermalization model of the bound exciton which involved in the capture and emission between the neutral donor bound exciton, the neutral acceptor bound exciton and the free exciton. Quantitative analysis with the proposed mechanism is in good agreement with the experimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)09102-1].

Identificador

http://ir.semi.ac.cn/handle/172111/13010

http://www.irgrid.ac.cn/handle/1471x/65475

Idioma(s)

英语

Fonte

Zhu ZM; Li GH; Liu NZ; Wang SZ; Han HX; Wang ZP .Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers ,JOURNAL OF APPLIED PHYSICS,1999,85(3):1775-1779

Palavras-Chave #半导体物理 #P-TYPE ZNSE #MOLECULAR-BEAM EPITAXY #EXCITATION SPECTROSCOPY #LASER-DIODES #ACCEPTORS #GROWTH
Tipo

期刊论文