Structural and optical properties of YAG : Ce3+ phosphors by sol-gel combustion method

High-quality Ce3+-doped Y3Al5O12 (YAG:Ce3+) phosphors were synthesized by a facile sol-gel combustion method. In this sol-gel combustion process, citric acid acts as a fuel for combustion, traps the constituent cations and reduces the diffusion length of the precursors. The XRD and FT-IR results show that YAG phase can form through sintering at 900 degrees C for 2 h. This temperature is much lower than that required to synthesize YAG phase via the solid-state reaction method. There were no intermediate phases such as YAlO3 (YAP) and Y4Al2O9 (YAM) observed in the sintering process. The average grain size of the phosphors sintered at 900-1100 degrees C is about 40 nm. With the increasing of sintering temperature, the emission intensity increases due to the improved crystalline and homogeneous distribution of Ce3+ ions. A blue shift has been observed in the Ce3+ emission spectrum of YAG:Ce3+ phosphors with increasing sintering temperatures from 900 to 1200 degrees C. It can be explained that the decrease of lattice constant affects the crystal field around Ce3+ ions. The emission intensity of 0.06Ce-doped YAG phosphors is much higher than that of the 0.04Ce and 0.02Ce ones. The red-shift at higher Ce3+ concentrations may be Ce-Ce interactions or variations in the unit cell parameters between YAG:Ce3+ and YAG. It can be concluded that the sol-gel combustion synthesis method provides a good distribution of Ce3+ activators at the molecular level in YAG matrix. (c) 2005 Elsevier B.V. All rights reserved.

gamma-LiAlO2 single crystal grown by Czochralski technique and modified by vapor transport equilibration (VTE) technique

Large-sized (similar to 2 inch, 50.8 mm) gamma-UA102 single crystal has been grown by conventional Czochralski (Cz) method, but the crystal ha's a milky, dendriform center. The samples taken from transparent and milky parts were ground and examined by X-ray diffraction. All diffraction peaks could be indexed in gamma-LiAlO2. The crystal quality was characterized by X-ray rocking curve. The full-width at half-maximum (FWHM) values are 116.9 and 132.0 arcsec for transparent and milky parts, respectively. The vapor transport equilibrium (VTE) technique was introduced to modify the crystal quality. After 1000 degrees C/48 h, 1100 degrees C/48 h, 1200 degrees C/48 h VTE processes, the FWHM values dropped to 44.2 and 55.2 arcsec for transparent and milky part, respectively. The optical transmission of transparent part was greatly enhanced from 85% to 90%, and transmission of milky part from 75% to 80% in the range of 190 similar to 1900 nm at room temperature. When the VTE temperature was raised to 1300 degrees C, the sample cracked and FWHM values of transparent and milky parts were increased to 55.2 and 80.9 arcsec, respectively. By combining Cz technique with VTE technique, large-sized and high quality gamma-LiAlO2 crystal can be obtained.

大尺寸高质量γ-LiAlO2晶体的制备研究

采用提拉法快速（6mm／h）生长了透明、φ45mm×50mm完整的铝酸锂晶体，但晶体中下部出现了一个树状、乳白色的核芯．分别从透明和乳白色核芯部位取样，研磨作粉末X射线衍射测试，发现两个样品所有的衍射峰均可以用γ-LiAlO2指标化．双晶摇摆曲线显示晶体透明和乳白色部位的半高宽分别为116．9arcsec和132．0axcsec，结晶质量较差．通过三步气相传输平衡法（简称VTE）处理后，透明部位半高宽值（FWHM）降至44．2arcsec，乳白色部位FWHM值降至53．3arcsec．结合快速生长和VTE

Comparison of ZnO films grown on before- and after-vapor transport equilibration (VTE) LiAlO2 substrates by pulsed laser deposition (PLD)

About Phi 45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.

提拉法Tm：YAG晶体的生长缺陷研究

采用提拉法(CZ)生长了质量优异的Tm：YAG晶体．部分晶片在1000℃的空气气氛中退火25h．借助光学显微镜、扫描电子显微镜(SEM)，结合化学腐蚀法，对Tm：YAG晶体退火前后(111)面的缺陷特征进行了研究．Tm：YAG晶体(111)面的位错腐蚀坑呈三角形．在偏光显微镜下观察了退火前后Tm：YAG晶体(111)面的应力双折射．同时应用高分辨X射线衍射法测定了晶体的完整性．实验结果表明，长时间空气气氛下高温退火有效降低了晶体中总的位错密度，提高了晶体质量．

Structural, morphological and optical properties of ZnO thin films grown on gamma-LiAlO2 substrate by pulsed laser deposition

ZnO thin films were deposited on the substrates of (100) gamma-LiAlO2 at 400, 550 and 700 degrees C using pulsed laser deposition (PLD) with the fixed oxygen pressure of 20 Pa, respectively. When the substrate temperature is 400 degrees C, the grain size of the film is less than 1 mu m observed by Leitz microscope and measured by X-ray diffraction (XRD). As the substrate temperature increases to 550 degrees C, highly-preferred c-orientation and high-quality ZnO film can be attained. While the substrate temperature rises to 700 degrees C, more defects appears on the surface of film and the ZnO films become polycrystalline again possibly because more Li of the substrate diffused into the ZnO film at high substrate temperature. The photoluminescence (PL) spectra of ZnO films at room temperature show the blue emission peaks centered at 430 nm. We suggest that the blue emission corresponds to the electron transition from the level of interstitial Zn to the valence band. Meanwhile, the films grown on gamma-LiAlO2 (LAO) exhibit green emission centered at 540 nm, which seemed to be ascribed to excess zinc and/or oxygen vacancy in the ZnO films caused by diffusion of Li. from the substrates into the films during the deposition.

Yb：Ca5（PO4）3F激光晶体的生长缺陷

采用提拉法生长了质量优异的Yb：Ca5（PO4）2F（Yb：FAP）晶体。运用化学腐蚀，光学显微镜、扫描电子显微镜以及能量散射光谱仪观察了该晶体中的生长条纹和包裹物等宏观缺陷，以及晶体的位错腐蚀形貌、位错密度及其分布情况，同时观察了晶体中亚晶界的形态。由晶体中位错的径向变化以及生长条纹可知：晶体在生长过程中为微凸界面生长。高温下CaF2的挥发造成了在晶体生长后期熔体中组分偏离化学计量比，出现组分过冷，形成包裹物。且位错密度显著增加。Yb：FAP晶体的各向异性使得晶体在（10 10）面的位错蚀坑形状、大小以

r面白宝石单晶的温梯法生长及缺陷研究

本文描述使用温梯法（TGT）生长（1-↑102）方向的白宝石单晶，应用X射线双晶摇摆曲线（XRC）测定了晶体内部的完整性，再利用KOH熔体腐蚀出样品的r面（1-↑102）上的位错蚀坑，借助扫描电子显微镜（SEM）进行观察，发现r面白宝石的位错腐蚀坑呈等腰三角形，并且有台阶状结构，并分析了位错的成因。

Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (000 1) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 gm were gown in the temperature range 700-720 degrees C. The growth rate of ZnO films was estimated to be 0.3 mu m h(-1). Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films. (c) 2006 Elsevier B.V. All rights reserved.

Yb：YAG透明陶瓷的制备和激光输出

制备了高质量的Yb：YAG透明陶瓷．Yb：YAG透明陶瓷的晶粒尺寸为10μm左右且分布均匀，晶界处和晶粒中没有杂质、气孔的存在．Yb：YAG样品中所有元素分布均匀，不同的晶粒间，晶粒和晶界间成分是一致的，没有出现成分的偏析．4mm厚样品的透过率为80％．LD泵浦获得了波长为1030nm，最大功率为268mW的连续激光输出．

温度梯度法生长Nd：YAG激光晶体的核心分布

用温度梯度法生长了直径为75mm大尺寸的Nd：YAG激光晶体，通过退火排除了生长过程中进入晶体的碳原子．用正交偏光显微镜观察了晶体的核心分布以及生长条纹．测试了室温下的吸收谱并利用吸收谱研究了Nd离子在YAG晶体中的分布．比较了温度梯度法与提拉法生长晶体的区别．

高质量LiGaO2晶体的提拉法生长及表征

采用提拉法成功地生长了高质量的LiGaO2单晶体,生长过程中没有观察到挥发现象。通过四晶X射线衍射、化学腐蚀、光学显微、透过光谱以及原子力显微镜对晶体的质量进行了表征。结果表明：晶体中无包裹物及气泡,具有很高的质量,（001）面晶片的摇摆曲线半高宽仅为16.2arcsec,正交的（001）、（100）及（010）三个晶面具有不同的腐蚀形貌,其位错密度均低于10^4/cm^2;LiGaO2晶体的吸收边约为220nm;化学机械抛光后的晶片表面非常光滑,其均方根粗糙度仅为0.1nm（5×5μm^2）。

Growth, etching morphology and spectra of LiAlO2 crystal

gamma-LiAlO2 single crystal was successfully grown by Czochralski method. The crystal quality was characterized by X-ray rocking curve and chemical etching. The effects of air-annealing and vapor transport equilibration (VTE) on the crystal quality, etch pits and absorption spectra of LiAlO2 were also investigated in detail. The results show that the as-grown crystal has very high quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec. Dislocation density in the middle part of the crystal is as low as about 3.0 x 10(3) cm(-2). The VTE-treated slice has larger FWHM value, etch pits density and absorption coefficient as compared with those of untreated and air-annealed slices, which indicates that the crystal quality became inferior after VTE treatment. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

Tm:Y_2SiO_5晶体的生长和光谱性质研究

采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AlGaAs二极管抽运固体激光器,在2μm波段固体激光器的应用上将有很大的发展潜力.