高质量LiGaO2晶体的提拉法生长及表征

采用提拉法成功地生长了高质量的LiGaO2单晶体,生长过程中没有观察到挥发现象。通过四晶X射线衍射、化学腐蚀、光学显微、透过光谱以及原子力显微镜对晶体的质量进行了表征。结果表明：晶体中无包裹物及气泡,具有很高的质量,（001）面晶片的摇摆曲线半高宽仅为16.2arcsec,正交的（001）、（100）及（010）三个晶面具有不同的腐蚀形貌,其位错密度均低于10^4/cm^2;LiGaO2晶体的吸收边约为220nm;化学机械抛光后的晶片表面非常光滑,其均方根粗糙度仅为0.1nm（5×5μm^2）。

High-quality LiGaO₂ crystal was grown by modified Czochralski method, and there was no volatilization during the crystal growth. The crystal was characterized by four-crystal X-ray diffraction, chemical etching, optical microscope, transmission spectra and atomic force microscope (AFM). The results showed that the as-grown crystal has very high quality and there are no inclusions and bubbles in the crystal. The FWHM of LiGaO₂ (001) slice is only 16.2 arcsec. The dislocation densities on (001), (100) and (010) planes are all less than 10⁴/cm². The absorption edge of LiGaO₂ crystal is about 220 nm. The chemico-mechanically polished LiGaO₂ slice shows very smooth surface, and the root-mean-square roughness is only 0.1 nm across the 5 × 5 μm² area.