Growth, etching morphology and spectra of LiAlO<inf>2</inf> crystal
Data(s) |
2008
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Resumo |
gamma-LiAlO2 single crystal was successfully grown by Czochralski method. The crystal quality was characterized by X-ray rocking curve and chemical etching. The effects of air-annealing and vapor transport equilibration (VTE) on the crystal quality, etch pits and absorption spectra of LiAlO2 were also investigated in detail. The results show that the as-grown crystal has very high quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec. Dislocation density in the middle part of the crystal is as low as about 3.0 x 10(3) cm(-2). The VTE-treated slice has larger FWHM value, etch pits density and absorption coefficient as compared with those of untreated and air-annealed slices, which indicates that the crystal quality became inferior after VTE treatment. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Huang Taohua;周圣明;Teng Hao;Lin Hui;Wang Jun .,Cryst. Res. Technol.,2008,43(8):801-805 |
Palavras-Chave | #光学材料;晶体 #gamma-LiAlO2 crystal #Czochralski method #etch pits #spectra |
Tipo |
期刊论文 |