Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing

于2010-11-23批量导入

分子束外延生长的n型Al掺杂ZnS_(1-x)Te_x深中心研究

应用电容-电压、光致荧光和深能级瞬态谱技术研究了分子束外延生长的n型Al掺杂ZnS_(1-x)Te_x外延层深中心。Al掺杂ZnS_(0.977)Te_(0.023)的光致荧光强度明显低于不掺杂的ZnS_(0.977)Te_(0.023),这表明一部分Al原子形成非辐射深中心。Al掺杂ZnS_(1-x)Te_x(x=0,0.017,0.04和0.046)的深能级瞬态傅里叶谱表明，Al引进导带下的0.21和0.39eV电子陷阱，Te除了作为材料合金的成分和等电子中心外，还涉及到一个电子陷阱的形成，其相对导带的能级位置随Te组分增加而减小。实验结果还表明仅有少量掺杂的Al原子形成非辐射中心，这说明Al对于Te组分范围内(x≤0.046)的ZnS_(1-x)Te_x外延层的确是一种非常好的施主杂质。

MOVPE生长Al（0.35）Ga（0.65）As/GaAs量子阱结构的光致发光

于2010-11-23批量导入

InxGa（1-x）As缓冲层上InyGa（1-y）As/（Al）GaA超晶格的光伏谱研究

于2010-11-23批量导入

GaAs/Al（0.3）Ga（0.7）As短周期超晶格中负微分电导效应的观察

于2010-11-23批量导入

1MeVSi＋衬底加温注入Al（0.3）Ca（0.7）As/GaAs超晶格和GaAs的晶格损伤研究

用卢瑟福背散射沟道技术研究了1MeVSi~+在衬底加温和室温下以不同剂量注入Al＿(0．3)Ga＿(0．7)As／GaAs超晶格和GaAs后的晶格损伤。在衬底加温下, 观察到Al＿(0．3)Ga＿(0．7)As／GaAs超晶格和GaAs都存在一个动态退火速率与缺陷产生速率相平衡的剂量范围, 以及两种速率失去平衡的临界剂量。用热尖峰与碰撞模型解释了晶格损伤积累与注入剂量和衬底温度的关系。

GaAs/Al（0.4）Ga（0.6）As多量子肼红外探测器光吸收计算

于2010-11-23批量导入

GaAs/Al（0.33）Ga（0.67）As短周期超晶格中能带不连续性随压力的变化

于2010-11-23批量导入

GaAs/Ga（0.7）Al（0.3）超晶格中场致激子峰展宽机制的研究

于2010-11-23批量导入

GaAs/Ga（0.7）Al（0.3）As短周期超晶格中的自电光双稳和多稳态效应

国家自然科学基金

含杂六角密积结构原子簇Al（12）M的电子结构

于2010-11-23批量导入

Al/a-Si:H界面反应和热处理行为光发射研究

国家自然科学基金

Au、Al/a-Si:H热退火行为研究

于2010-11-23批量导入

Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

Deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular fiction epitaxy (MBE), Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that At doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction hand. 1)DLTFS results suggest that in addition to the rules of Te as a component of [lie alloy as well as isoelectronic centers, Te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, Te composition increases.

High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers

980nm InGaAs/InGaAsP/AlGaAs strained quantum well lasers,vitta novel large optical cavity and asymmetrical claddings was fabricated bg MOCVD. Very high differential quantum efficiency elf 90% (1.15W/A) and low vertical divergence angle of 24 degrees at long cavity length were obtained for 100 mu m stripe lasers. The differential quantum efficiency is up to 94% (1.20) at cavity length of 500 mu m.