956 resultados para Laser induced damage


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Porous SiO2 antireflective (AR) coatings are prepared from the colloidal silica solution modified with methyltriethoxysilane (MTES) based on the sol-gel route. The viscosity of modified silica suspensions changes but their stability keeps when MTES is introduced. The refractive indices of modified coatings vary little after bake treatment from 100 to 150 Celsius. The modified silica coatings on Ti:sapphire crystal, owning good homogeneity, display prominent antireflective effect within the laser output waveband (750-850 nm) of Ti:sapphire lasers, with average transmission above 98.6%, and own laser induced damage thresholds (LIDTs) of more than 2.2 J/cm2 at 800 nm with the pulse duration of 300 ps.

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Laser conditioning effects of the HfO2/SiO2 antireflective (AR) coatings at 1064 nm and the accumulation effects of multishot laser radiation were investigated. The HfO2/SiO2 AR coatings were prepared by E-beam evaporation (EBE). The singleshot and multi-shot laser induced damage threshold was detected following ISO standard 11254-1.2, and the laser conditioning was conducted by three-step raster scanning method. It was found that the single-shot LIDT and multi-shot LIDT was almost the same. The damage mostly > 80% occurred in the first shot under multi-shot laser radiation, and after that the damage occurring probability plummeted to < 5%. There was no obvious enhancement of the laser damage resistance for both the single-shot and multi-shot laser radiation of the AR coatings after laser conditioning. A Nomarski microscope was employed to map the damage morphology, and it found that the damage behavior is defect-initiated for both unconditioned and conditioned samples. © 2004 Elsevier B.V. All rights reserved.

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A new model for analyzing the laser-induced damage process is provided. In many damage pits, the melted residue can been found. This is evidence of the phase change of materials. Therefore the phase change of materials is incorporated into the mechanical damage mechanism of films. Three sequential stages are discussed: no phase change, liquid phase change, and gas phase change. To study the damage mechanism and process, two kinds of stress have been considered: thermal stress and deformation stress. The former is caused by the temperature gradient and the latter is caused by high-pressure drive deformation. The theory described can determine the size of the damage pit. (c) 2006 Optical Society of America.

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The single- and multi-shot damage behaviors of HfO2/SiO2 high-reflecting (HR) coatings under Nd:YAG laser exposure were investigated. Fundamental aspects of multi-shot laser damage, such as the instability due to pulse-to-pulse accumulation of absorption defect and structural defect effect, and the mechanism of laser induced defect generation, are considered. It was found in multi-shot damage, the main factors influencing laser-induced damage threshold (LIDT) are accumulation of irreversible changes of structural defects and thermal stress that induced by thermal density fluctuations.

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We investigate the laser damage behaviour of an electron-beam-deposited TiO2 monolayer at different process parameters. The optical properties, chemical composition, surface defects, absorption and laser-induced damage threshold (LIDT) of Elms are measured. It is found that TiO2 Elms with the minimum absorption and the highest LIDT can be fabricated using a TiO2 starting material after annealing. LIDT is mainly related to absorption and is influenced by the non-stoichiometric defects for TiO2 films. Surface defects show no evident effects on LIDT in this experiment.

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TiO2 films are deposited by electron beam evaporation as a function of oxygen partial pressure. The packing density, refractive index, and extinction coefficient all decrease with the increase of pressure, which also induces the change of the film's microstructure, such as the increase of voids and H2O concentration in the film. The laser-induced damage threshold (LIDT) of the film increases monotonically with the rise of pressure in this experiment. The porous structure and low nonstoichiometric defects absorption contribute to the film's high LIDT. The films prepared at the lowest and the highest pressure show nonstoichiometric and surface-defects-induced damage features, respectively.(C) 2007 American Institute of Physics.

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Laser-induced damages to TiO2 single layers and TiO2/SiO2 high reflectors at laser wavelength of 1064 nm, 800 run, 532 urn, and pulse width of 12 ns, 220 ps, 50 fs, 8 ns are investigated. All films are prepared by electron beam evaporation. The relations among microstructure, chemical composition, optical properties and laser-induced damage threshold (LIDT), have been researched. The dependence of damage mechanism on laser wavelength and pulse width is discussed. It is found that from 1064 nm to 532 nm, LIDT is mainly absorption related, which is determined by film's extinction coefficient and stoichiometric defects. The rapid decrease of LIDT at 800 nm is due to the pulse width factor. TiO2 coatings are mainly thermally by damaged at long pulse (tau >= 220 ps). The damage shows ablation feature at 50 fs. (C) 2007 Elsevier B.V. All rights reserved.

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TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.

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Neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (ETA). It has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with ETA. Laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) data show that the dominant effect is the increase of a level at 0.39 eV below the conduction band (E(c) - 0.39 eV) or a level above the valence band (E(v) + 0.39 eV). Candidates tentatively identified for this level are the singly charged double vacancy (V-V-) level at E(c) - 0.39 eV, the carbon interstitial-oxygen interstitial (C-i-O-i) level at E(v) + 0.36 eV, and/or the tri-vacancy-oxygen center (V3O) at E(v) + 0.40 eV.

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The recent commissioning of a X-ray free-electron laser triggered an extensive research in the area of X-ray ablation of high-Z, high-density materials. Such compounds should be used to shorten an effective attenuation length for obtaining clean ablation imprints required for the focused beam analysis. Compounds of lead (Z=82) represent the materials of first choice. In this contribution, single-shot ablation thresholds are reported for PbWO4 and PbI2 exposed to ultra-short pulses of extreme ultraviolet radiation and X-rays at FLASH and LCLS facilities, respectively. Interestingly, the threshold reaches only 0.11 J/cm(2) at 1.55 nm in lead tungstate although a value of 0.4 J/cm(2) is expected according to the wavelength dependence of an attenuation length and the threshold value determined in the XUV spectral region, i.e., 79 mJ/cm(2) at a FEL wavelength of 13.5 nm. Mechanisms of ablation processes are discussed to explain this discrepancy. Lead iodide shows at 1.55 nm significantly lower ablation threshold than tungstate although an attenuation length of the radiation is in both materials quite the same. Lower thermal and radiation stability of PbI2 is responsible for this finding.

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Glass is a common form of trace evidence found at many scenes of crimes in the form of small fragments. These glass fragments can transfer to surrounding objects and/or persons and may provide forensic investigators valuable information to link a suspect to the scene of a crime. Since the elemental composition of different glass sources can be very similar, a highly discriminating technique is required to distinguish between fragments that have originated from different sources. ^ The research presented here demonstrates that Laser Induced Breakdown Spectroscopy (LIBS) is a viable analytical technique for the association and discrimination of glass fragments. The first part of this research describes the optimization of the LIBS experiments including the use of different laser wavelengths to investigate laser-material interaction. The use of a 266 nm excitation laser provided the best analytical figures of merit with minimal damage to the sample. The resulting analytical figures of merit are presented. The second part of this research evaluated the sensitivity of LIBS to associate or discriminate float glass samples originating from the same manufacturing plants and produced at approximately the same time period. Two different sample sets were analyzed ranging in manufacturing dates from days to years apart. Eighteen (18) atomic emission lines corresponding to the elements Sr, K, Fe, Ca, Al, Ba, Na, Mg and Ti, were chosen because of their detection above the method detection limits and for presenting differences between the samples. Ten elemental ratios producing the most discrimination were selected for each set. When all the ratios are combined in a comparison, 99% of the possible pairs were discriminated using the optimized LIBS method generating typical analytical precisions of ∼5% RSD. ^ The final study consisted of the development of a new approach for the use of LIBS as a quantitative analysis of ultra-low volume solution analysis using aerosols and microdrops. Laser induced breakdown spectroscopy demonstrated to be an effective technique for the analysis of as low as 90 pL for microdrop LIBS with 1 pg absolute LOD and 20 µL for aerosol LIBS with an absolute LOD of ∼100 fg.^

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Presently, global rates of skin cancers induced by ultraviolet radiation (UVR) exposure are on the rise. In view of this, current knowledge gaps in the biology of photocarcinogenesis and skin cancer progression urgently need to be addressed. One factor that has limited skin cancer research has been the need for a reproducible and physiologically-relevant model able to represent the complexity of human skin. This review outlines the main currently-used in vitro models of UVR-induced skin damage. This includes the use of conventional two-dimensional cell culture techniques and the major animal models that have been employed in photobiology and photocarcinogenesis research. Additionally, the progression towards the use of cultured skin explants and tissue-engineered skin constructs, and their utility as models of native skin's responses to UVR are described. The inherent advantages and disadvantages of these in vitro systems are also discussed.

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A theory for the emission of X-rays from a high density gaseous plasma interacting with CO2 laser is given. It predicts a sharp increase in the X-ray intensity for densities close to the critical.

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Abstract is not available.