Improvement of Nano-structured GaN Films Grown on Sapphire by Laser-Induced Reactive Epitaxy
| Contribuinte(s) |
Wilson, A |
|---|---|
| Data(s) |
2005
|
| Identificador | |
| Publicador |
SPIE--The International Society for Optical Engineering |
| Relação |
Bell, John, Phillipp, F, Schroder, H, & Zhou, Hao (2005) Improvement of Nano-structured GaN Films Grown on Sapphire by Laser-Induced Reactive Epitaxy. In Wilson, A (Ed.) Smart Materials III: Proceedings of SPIE Vol. 5648, 12 December - 14 December 2004, Australia, New South Wales, Sydney. |
| Fonte |
Faculty of Built Environment and Engineering |
| Palavras-Chave | #091200 MATERIALS ENGINEERING #Gallium Nitride, Transmission Electron Microscopy, Polarity, Convergent Beam Electron Diffraction, Laser Induced Molecular Beam Epitaxy |
| Tipo |
Conference Paper |
