High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching

High power and high-slope efficiency 650nm band real-refractive-index ridge waveguide AlGaInP laser diodes with compressive strained MQW active layer are formed by pure Ar ion beam etching process.Symmetric laser mesas with high perpendicularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching method.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.The typical threshold current of these devices is 46mA at room temperature,and a stable fundamental-mode operation over 40mW is obtained.Very high slope efficiency of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.

Design of spectrometer based on volume phase grating for near infrared range

In order to design and fabricate a spectrometer for the infrared range widely used in the different applications, Volume Phase Grating (VPG) with. low Polarization Dependence Loss (PDL) and high efficiency has been adopted as the dispersion element. VPG is constructed by coating an optical substrate with a thin film of dichromated. gelatin and exposing the film to two mutually coherent laser beams to form index modulation. The diffraction efficiency for a VPG is governed by Bragg effects. The depth (d) and index modulation contrast of the grating structure control the efficiency at which the light is diffracted when the Bragg condition is satisfied. Gradient index lens with high performance and low aberration are used as collimating system instead of standard lens. The spot diagrams and MTF curve of the collimating lens are shown in the paper. The receive system is InCaAs photodiode (PD) array including 512 pixels with 25 mum pitch. The spectrum resolution of the spectrometer reaches to 0.2nm and wavelength accuracy is 40pm.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Tolerance analysis for incident angle of volume phase holographic grating used in optical channel performance monitor

Transmission Volume Phase Holographic Grating (VPHG) is adopted as spectral element in the real-time Optical Channel Performance Monitor (OCPM), which is in dire need in the Dense Wavelength -division-multiplexing(DATDM) system. And the tolerance of incident angle, which can be fully determined by two angles: 6 and (p, is finally inferred in this paper. Commonly, the default setting is that the incident plane is perpendicular to the fringes when the incident angle is mentioned. Now the situation out of the vertical is discussed. By combining the theoretic analysis of VPHG with its use in OCPM and changing 6 and (0 precisely in the computation and experiment, the two physical quantities which can fully specify the performance of VPHG the diffraction efficiency and the resolution, are analyzed. The results show that the diffraction efficiency varies greatly with the change of 6 or (p. But from the view of the whole C-band, only the peak diffraction efficiency drifts to another wavelength. As for the resolution, it deteriorates more rapidly than diffraction efficiency with the change of (p, while more slowly with the change of theta. Only if \phi\less than or equal to+/-1degrees and alpha(B) -0.5 less than or equal to theta less than or equal to alpha(B) + 0.5, the performance of the VPHG would be good enough to be used in OCPM system.

650nm AlGaInP quantum well lasers for the application of DVD

Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate here the 650nm AlGaInP LD grown by LP-MOCVD with the structure of selected buried ridge waveguide. Excellent performance of LD have been achieved such as threshold current, threshold current density as low as 20mA and 350A/cm(2) respectively at room temperature, the operating temperature up to 90 for the linear power output of 5mw. RIN is about -130db/Hz, The samples of LD have been certified by PUH manufacturers.

High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD

Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C.

High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained.

Visible vertical cavity surface emitting laser

We have designed and fabricated the visible vertical-cavity surface-emitting lasers (VCSEL's) by using metalorganic vapor phase epitaxy (MOVPE). We use the 8 lambda optical cavities with 3 quantum wells in AlGaInP/AlGaAs red VCSEL's to reduce the drift leakage current and enhance the model gain in AlGaInP active region. The structure has a p-type stack with 36 DBR pairs on the top and an n-type with 55-1/2 pairs on the bottom. Using micro-area reflectance spectrum, we try to get a better concordance between the center wavelength of DBR and the emitting wavelength of the active region. We used a component graded layer of 0.05 lambda thick (x = 0.5 similar to 0.9) at the p-type DBR AlGaAs/AlAs interface to reduce the resistance of p-type DBR. We use selective oxidation to define the current injection path. Because the oxidation rate of a thick layer is faster than a thinner one, we grown a thick AlAs layer close to the active region. In this way, we got a smaller active region for efficient confinement of injected carriers (the aperture area is 3 x 3 mu m) to reduce the threshold and, at the same time, a bigger conductive area in the DBR layers to reduce the resistance. We employ Zn doping on the p-side of the junction to improve hole injection and control the Zn dopant diffusion to get proper p-i-n junction. At room temperature, pulse operation of the laser has been achieved with the low threshold current of 0.8mA; the wavelength is about 670nm.

The study of single mode 650nm AlGaInP quantum well laser diodes for DVD

Single mode 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) was reported in this paper. Selected buried rigewaveguid were applied for single mode operation especially for DVD use. The operating temperature over 90 degree at CW output power 5 mW was achieved.

Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure

The single delta -doped InGaAs/AlGaAs pseudomorphic HEMT structure materials were grown by molecular beam epitaxy. The photoluminescence spectra of the materials were studied. There are two peaks in the photoluminescence spectra of the materials, corresponding to two sub energy levels of InGaAs quantum well. The ratio of the two peak's intensity was used as criterion to optimize the layer structures of the materials. The material with optimized layer ;tructures exhibits the 77 It mobility and two-dimensional electron gas density of 16 500 cm(2)/Vs and 2.58 x 10(12) cm(-2) respectively, and the 300 K mobility and two-dimensional electron gas density of 6800 cm(2)/Vs and 2.55 x 10(12) cm(-2) respectively. The pseudomorphic HEMT devices with gate length of 0.2 mum were fabricated using this material. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 Elsevier Science B.V. All rights reserved.

High-quality metamorphic HEMT grown on GaAs substrates by MBE

Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature Hall have been used to analyze the properties of the buffer layers and the M-HEMT structure. For a single-delta-doped M-HEMT structure with an In0.53Ga0.47As channel layer and a 0.8 mum step-graded InAlAs buffer layer, room-temperature mobility of 9000 cm(2)/V s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. These results are nearly equivalent to those obtained for the same structure grown on an InP substrate. A basic M-HEMT device with 1 mum gate was fabricated, and g(m) is larger than 400 mS/mm. (C) 2001 Elsevier Science B.V. All rights reserved.

Ultrasensitive Detection of Infrared Photon Using Microcantilever: Theoretical Analysis

We present a new method for detecting near-infrared, mid-infrared, and far-infrared photons with an ultra-high sensitivity. The infrared photon detection was carried out by monitoring the displacement change of a vibrating microcantilever under light pressure using a laser Doppler vibrometer. Ultrathin silicon cantilevers with high sensitivity were produced using micro/nano-fabrication technology. The photon detection system was set up. The response of the microcantilever to the photon illumination is theoretically estimated, and a nanowatt resolution for the infrared photon detection is expected at room temperature with this method.

中国合叶苔科（苔纲）植物的研究

合叶苔科Scapaniaceae隶属于苔纲Hepaticae叶苔目Jungermanniales，全世界约6属136个现存种，1个化石种。合叶苔科的科和属的特征明显，但物种间变化大，分类比较困难，部分属种的分类位置亦存在争议。本研究前，中国已记录合叶苔科植物有4属，66种3变种，其中9种1变种已归为同物异名，承认的种类共57种2变种。以中国产标本为基础发表的新分类单位共2属16种2变种。目前尚无专门针对中国合叶苔科的系统研究，因此，开展中国合叶苔科的分类、区系和生态研究，对深入认识中国苔类植物多样性、区系和系统具有重要的科学意义。 本研究运用植物学经典分类的基本方法和现代的分支系统分析方法，对国内、外主要苔藓植物标本馆的中国合叶苔科植物的模式标本和有关标本进行了较全面的检查和详细的形态解剖和分类学研究，并开展了野外补充调查采集，完成了对中国合叶苔科植物的分类修订，分析该科的区系成分组成和在中国的地理分布特点及其属种之间的分支系统关系。研究的主要结果如下： （1）在相关模式标本和国内外标本鉴定和研究的基础上，确认中国合叶苔科有3属52种1变种，包括：大褶叶苔属Macrodiplophyllum1种，褶叶苔属Diplophyllum5种，合叶苔属Scapania46种1变种。发现并发表新种2个，即片毛合叶苔S. macroparaphyllia T. Cao, C. Gao & J. Sun（曹同等，2004）和毛茎合叶苔S. paraphyllia T. Cao, C. Gao, J. Sun et B. R. Zuo（Zuo et al., 2007）；发现中国新分布记录2种，尖瓣合叶苔S. ampliata Steph.（Zuo & Cao, 2007）和扁平合叶苔S. compacta (Roth) Dum.(首次报道，尚未发表)。完成了对中国合叶苔科植物的分类修订，对每个属、种都进行了文献考证、特征描述、图版绘制和分类讨论，并利用Mapinfo软件绘制了各种在中国的分布图。 （2）对相关模式标本标定和研究，澄清了一些分类问题和中国种的概念。如对东亚分布的若干种类进行了比较和评估，划定其分类界限，确认2种已经被归并为弯瓣合叶苔S. parvitexta Steph.新异名的种类仍然为独立的种，即细齿合叶苔S. parvidens Steph.和灰绿合叶苔S. glaucoviridis Horik.。并对东亚特有属种侧囊苔属的侧囊苔Delavayella serrata Steph.进行了模式标定，探讨了它的地理分布和系统位置，支持将其独立成侧囊苔科Delavayellaceae的观点。 （3）在标本鉴定和野外采集工作的基础上，合叶苔科各种在中国的分布范围大为增加，为开展中国合叶苔科的地理分布格局奠定了基础。对现有的地理分布资料的分析表明，西南地区（西藏，云南，四川，贵州）是中国的合叶苔属植物的分布中心和可能的起源中心，共有合叶苔40种，占该属总数（46种）的86.96%，其中，15种仅分布在西南地区，中国特产9种中，有8种在西南地区分布。此外，东北地区、华东地区及台湾省分布种类较多，分别为16种（34.78%），22种（47.83%）和17种（36.96%）种的分布。 （4）区系成分分析结果表明，合叶苔属Scapania主要由2大区系成分组成：东亚成分25种，占总数的51%，其中，中国-日本分布7种，中国-喜马拉雅分布9种，中国特产种9种。北温带成分22种，占总数的45%，其中有18种在亚洲，欧洲和北美洲均有分布。褶叶苔属Diplophyllum 5种，4种为北温带成分，1种为中国-日本分布的东亚成分。分析结果反映了中国苔藓植物区系的基本特点，即与欧美植物区系有密切联系，同时又体现了较强的东亚区系特色。 （5）对合叶苔属Scapania植物的生态和生境分析表明，47个分类群可分成3种主要类型：1）沼泽或水湿生；2）以腐木生为主，有时生于岩面薄土上的小型种类；3）潮湿岩面或林下土生的中等和大型种类。 （6）选取了39个反映系统发育关系的形态特征，以与合叶苔科相近的裂叶苔科Lophoziaceae中挺叶苔属Anastrophyllum 2种和裂叶苔属Lophozia 1种为外类群，运用外类群比较法对合叶苔科的的属种之间的演化关系进行了分支系统分析。结果表明，原归于合叶苔科的侧囊苔属Dalevayella为单独的一个分支，应为独立的侧囊苔科Dalevayellaceae。大褶叶苔属Macrodiplophyllum和褶叶苔属Diplophyllum植物相近，可归并为一个属，与合叶苔属Scapania同为合叶苔科Scapaniaceae下的属。中国合叶苔属47个分类群可分为若干组，主要与其生境，植物体，叶的结构，无性繁殖等特征有关，结果与目前采用的合叶苔科的分类系统与演化关系基本一致。

铁砷共沉淀物长期稳定性研究

有色金属的冶炼过程中会产生大量砷含量很高的酸性废水，其任意排放会造成严重的环境砷污染，必须对其进行除砷处理达标后才能向环境排放。目前，铁砷共沉淀法是一种被广泛应用且较为经济的废水除砷技术，然而由此产生的大量含砷工业废渣中砷的化学形态尚不清楚，其稳定性也较差，容易造成严重的二次砷污染。因此，弄清铁砷共沉淀法产生的工业废渣中砷的化学形态，通过技术改造增强其长期稳定性，探索砷稳定性变化的分子机制具有重要的理论和现实意义。 本文对硫酸盐体系铁砷共沉淀法处理含砷废水所产生的废渣在长期稳定堆放过程中的稳定性及其影响因素进行了系统深入的研究。实验结果表明： （1）铁砷共沉淀物的稳定性受体系的最终pH值影响很大，随体系pH升高，含砷共沉淀物稳定性明显下降。溶液呈弱酸性时(pH 4或5)，含砷共沉淀物的稳定性较好，溶液呈弱碱性时(pH 8或9)，含砷共沉淀物的稳定性较差。 （2）碱类型影响含砷共沉淀物的稳定性，使用CaO中和酸性铁砷溶液显著提高了共沉淀的稳定性。在含砷溶液中添加钙离子也具有明显提高含砷共沉淀物稳定性的作用。 （3）Fe(III)/As(V)比影响铁砷共沉淀物稳定性，Fe(III)/As(V)越大，所形成共沉淀物越稳定。在铁砷酸性溶液的中和过程中，在pH=4时停留一段时间能够明显提高共沉淀物的稳定性，这种特性对于优化工业共沉淀法除砷工艺从而提高共沉淀含砷废渣稳定性具有重要意义。 （4）腐殖酸的加入最终削弱了铁砷共沉淀物中砷的稳定性。 （5）与Fe(III)-As(V)体系相比，Fe(III)-As(III)共沉淀体系中，共沉淀物在弱碱性区稳定性较好，在弱酸性区稳定性较差。在Fe(III)-As(III)-As(V)体系中，使用NaOH作为碱时，在弱碱性区稳定较好，而在弱酸性区稳定性较差。使用CaO作为中和碱在弱碱性区提高了共沉淀体系的稳定性，而在弱酸性区则降低了共沉淀体系的稳定性。

中国裂叶苔科植物的研究-分类、区系和生态

裂叶苔科（Lophoziaceae）是叶苔目植物中的一个大科，其植物体形态变化较大，分类较为困难。中国在裂计佩一苔科下已记录的植物有23属、106种、2变种和2变形。本论文在大量文献考证和对国内外3000余份标本深入研究基础上，对中国裂仆佩一苔科进行了较系统全面的分类修订，记录了中国裂价卜苔科植物共有11属45种3变种1变形，提供了种属形态特征描述和41幅图版。发现中国新记录2种1变型：异瓣裂叶苔（Lophozia diversiloba Hatt），毛口挺叶苔（Anastrophyllum piligerm (Nees.) Steph.）和密叶三瓣苔小叶变形（Tritomaria quinquedentata fo. gracilis (Jens.) Schust.）；新组合名1个：小挺叶苔尖变种（Anastrophyllum minutum (Schreb. in Cranz.) Schust var. acuminatum (Horik.) Cao & Sun comb. nov.），还有省区新分布记录16个。采用聚类分析方法分析了裂叶苔科种属间的关系，结果支持广义裂汗卜苔属和挺口一卜苔属的概念。 区系成分的分析研究表明：中国裂计佩一苔科植物的地理成分主要以泛北极分布类型为主，占79.6%.东北地区、秦岭地区、西南地区和台湾省为我国裂p_佩一苔科植物种类最丰富的地区。在国内首次开展了苔类专科的生态学研究，并采用CCA方法对结果进行分析。研究表明：裂叶苔科植物在长白山分布上表现出明显的垂直地带性，可分为三类：（1)分布在2000米以上苔原带的种类，主要有小挺叶苔A. minutum、石生挺叶苔A. saxicola、密叶三瓣苔T. quinquedentata、高山裂叶苔L. sudetica，圆叶裂叶L. wenzelii；（2）分布在1730米到2000米苔岳桦林带的种类，主要有：方叶无褶苔L. bantriensis，细裂瓣苔B. barbata，阔瓣裂叶苔L. excisa；（3）分布在1150-1730米以下暗针叶林的种类，主要有：三瓣苔T. exsecta，多角胞三瓣苔T. exsectiformis、囊苞裂叶苔L. ventricosa，秃瓣裂叶苔L. obtusa和倾立裂叶苔L. ascendens。影响裂叶苔科植物分布的主要坏境因子是海拔高度。 对处于不同纬度三个地区的同种裂叶苔科植物的比较分析说明：随纬度的升高其分布的海拔高度逐步降低。