The study of single mode 650nm AlGaInP quantum well laser diodes for DVD


Autoria(s): Ma XY; Cao Q; Wang ST; Guo L; Wang LM; Yang YL; Zhang HQ; Zhang XY; Chen LH
Data(s)

1998

Resumo

Single mode 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) was reported in this paper. Selected buried rigewaveguid were applied for single mode operation especially for DVD use. The operating temperature over 90 degree at CW output power 5 mW was achieved.

Single mode 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) was reported in this paper. Selected buried rigewaveguid were applied for single mode operation especially for DVD use. The operating temperature over 90 degree at CW output power 5 mW was achieved.

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SPIE.; COS.; COEMA.

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

SPIE.; COS.; COEMA.

Identificador

http://ir.semi.ac.cn/handle/172111/13889

http://www.irgrid.ac.cn/handle/1471x/105126

Idioma(s)

英语

Publicador

SPIE-INT SOC OPTICAL ENGINEERING

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

Fonte

Ma XY; Cao Q; Wang ST; Guo L; Wang LM; Yang YL; Zhang HQ; Zhang XY; Chen LH .The study of single mode 650nm AlGaInP quantum well laser diodes for DVD .见:SPIE-INT SOC OPTICAL ENGINEERING .SEMICONDUCTOR LASERS III, 3547,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,127-129

Palavras-Chave #半导体物理 #AlGaInP #quantum well #laser diode #MOCVD #DVD
Tipo

会议论文