2,3'-联吡啶还原合成毒藜碱、安那他品和异毒藜碱

本论文从2，3'-联吡啶出发，利用两个吡啶环上氮的反应活性差异，选择性合成了单烷基盐1-甲基-2，3，-联吡啶盐、1-甲基-1，一氧-2，3，-联吡啶盐和1'-甲基／节基2，3气联吡啶盐，还原单烷基盐合成了天然生物碱毒黎碱、安那他品和异毒黎碱及其衍生物：对异毒黎碱的合成由还原N，-节基盐后脱节基简化为一步实现还原和脱节基直接得到异毒黎碱。通过用（R）-BINOL和（S）-BINOL对N，-节基异毒黎碱拆分得到了旋光纯的N，-节基异毒黎碱和异毒黎碱，-N，-节基异毒黎碱的旋光度［a］D20：-61．50（c＝2．0，乙醇），卜异毒黎碱的旋光度fa］D20：-14．4"（c-1．0，乙醇）；将C关异毒黎碱用（RMTPA和（s）MT队衍生为Mosher酞胺，应用Mosllel方法确定了C）异毒黎碱手性中心的绝对构型为R型，即（R）-C）异毒黎碱，同时发现，由（R）一MTPA合成的Mosller酞胺中顺式旋转异构体占优。而通常在环胺的Mosller酞胺中，是反式旋转异构体占优。这一例外被MollteCarlo模型模拟计算结果解释：稀溶液中C卜异毒黎碱的Moshel－酞胺，顺式构型能量上比反式更有利。不对称合成天然生物碱更具有挑战性。对异毒黎碱还原合成中的呱l淀烯类中间体，用BINAP-灿催化体系进行了催化不对称还原的合成研究，氢化N'-节基-1，，4，，5，，6，-四氢一2，3，一联吡陡时得到了最高为21．5％的对映体选择性，而对N'-节基一1，，2'，5'，6，-四氢-2，3'一联吡陡的氢化则只得到了不超过10．0％的对映体选择性。

p型掺杂1.3 μm InAs/GaAs量子点激光器的最大模式增益特性的研究

对p型掺杂1.3 μm InAs/GaAs量子点激光器的最大模式增益进行了实验和理论分析.实验上,测量了不同腔长激光器阈值电流密度与总损耗的对应关系,拟合出的最大模式增益为17.5 cm~(-1),与相同结构非掺杂量子点激光器的最大模式增益一致.同时理论分析表明,p型掺杂对InAs/GaAs量子点激光器的最大模式增益并无影响,并且最大模式增益的计算结果与实验值相符.具有较小高度或高宽比的量子点能达到更高的最大模式增益,而较高的最大模式增益对p型掺杂1.3 μm InAs/GaAs自组织量子点激光器在光通信系统中的应用具有重要意义.

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

In0.2 Ga0.8 As-GaAs复合应力缓冲层上的1.3 μmInAs/GaAs自组织量子点

用光荧光谱和原子力显微镜测试技术系统研究了在2 nm In0.2Ga0.8As和x ML GaAs的复合应力缓冲层上生长的InAs/GaAs自组织量子点的发光特性和表面形貌.采用In0.2Ga0.8As与薄层GaAs复合的应力缓冲层,由于减少了晶格失配度致使量子点密度从约1.7×109 cm-2显著增加到约3.8×109cm-2.同时,复合层也有利于提高量子点中In的组份,使量子点的高宽比增加,促进量子点发光峰红移.对于x=10 ML的样品室温下基态发光峰达到1350 nm.

A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers

A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.

Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots

Self-organized In_(0.5)Ga_(0.5)As/GaAs quantum island structure emitting at 1. 35 (im at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs)_1/( GaAs)_1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In_(0.5)Ga_(0.5)As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices.

巨磁电阻材料La_(2/3)Ca_(1/3)Mn(O_(1-x),F_x)_3的研究

主要采用了X射线衍射、Mossbauer谱、磁测量等方法系统研究了块体巨磁电阻材料La_(2/3)Ca_(1/3)Mn_(1-x)Fe_xO_3在不同铁含量(0≤x≤0.84)时结构、性能、磁性的变化，并给予合理的解释。在0

1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长

报道了用低压金属有机物化学气相淀积(LP-MOCVD)方法外延生长InGaAsP/InP应变补偿多量子阱结构。用此材料制备的掩埋异质结(BH)条形结构多量子阱激光器具有极低阈值电流4～6mA。20～40℃时特征温度T_0高达67K，室温下外量子效率为0.3mW/mA。

低阈值1.3μm InGaAsP/InP应变补偿多量子阱DFB激光器LP-MOCVD生长

报道了用低压－金属有机化学气相淀积(LP-MOCVD)方法制作1.3μm应变补偿多量子阱结构材料。X射线双晶衍射摇摆曲线可清晰地看到±4级卫星峰和卫星峰间的Pendellosong条纹。整个有源区的平均应变量几乎为零。用掩埋异质结(BH)条形工艺制备的含一级光栅的DFB激光器室温下阈值电流2～4mA,外量子效率0.33mW/mA,线性输出光功率达30mW,边模抑制比(SMSR)大于35dB。20～40℃下的特征温度T_0为67K。

LP-MOVPE生长的低阈值1.3μm InGaAsP/InP 压、张应变交替 MQW 激光器特性

国内首次报道了LP-MOVPE法生长高质量的高、张应变交替InGaAsP多量子阱结构的研制过程及其材料的高精度X-ray双晶摇摆衍射曲线和荧光光谱特性表征。经过双腔面镀增透射膜后，其TE模与TM模自发发射谱光强差为3dBm，呈现偏振补偿特性。

1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-mum diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.

Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy

1.3 mum wavelength In(Ga)As/GaAs nanometer scale islands grown by molecular beam epitaxy (MBE) were characterized by photoluminescence (PL) and atomic force microscopy (AFM) measurements. It is shown that inhomogeneous broadening of optical emission due to fluctuation of the In0.5Ga0.5As islands both in size and in compositions can be effectively suppressed by introducing a AlAs layer and a strain reduction In0.2Ga0.8As layer overgrown on top of the islands, 1.3mum emission wavelength with narrower line-width less than 20meV at room temperature was obtained.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.

Double ionization of helium in collision with 20-500-keV/amu Cq+ and Oq+ (q=1-3) ions

Target ionization and projectile charge changing were investigated for 20-500 keV/u Cq+, Oq++He (q=1-3) collisions. Double- to single-ionization ratios R-21 of helium associated with no projectile charge change (direct ionization), single-electron capture, and single-electron loss were measured. The cross-section ratio R-21 depends strongly on the collision velocity v, the projectile charge state q, and the outgoing reaction channel. Meanwhile, a model extended from our previous work [J. X. Shao, X. M. Chen, and B. W. Ding, Phys. Rev. A 75, 012701 (2007)] is presented to interpret the above-mentioned dependences. Good agreement is found between the model and the experimental data.