5.3-W Nd:YVO_4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM), and the pulse repetition rate is 83 MHz.

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.

A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs

A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （SLD） with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy （MOVPE）. At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.

Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers

Room temperature operation is an important criterion for high performance of quantum cascade lasers. A strain-compensated quantum cascade laser（λ≈5.5μm） with optimized waveguide structure lasing at room temperature is reported. Accurate control of layer thickness and strain-compensated material composition is demonstrated using X-ray diffraction. An output power of at least 45mW per facet is realized for a 20μm-wide and 2mm-long laser at room temperature.

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

The growth,fabrication,and characterization of 0.2μm gate-length AlGaN/GaN HEMTs,with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described.The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cm2/(V·s) at an electron concentration of 1.52×1016 cm-3.The resistivity of the thick GaN buffer layer is greater than 108Ω·cm at room temperature.The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω/□ with uniformity better than 96%.Devices of 0.2μm×40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of77GHz.The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W (2.23W/mm) and a linear gain of 13.3dB at 8GHz.The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers

Quantum dot gain spectra based on harmonic oscillator model are calculated including and excluding excitons. The effects of non-equilibrium distributions are considered at low temperatures. The variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed. Also,the improvement of quantum dot lasers＇ performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density,is calculated.

Growth of Space Ordered on GaAs（100） Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD

Space ordered 1.3μm self-assembled InAs QDs are grown on GaAs（100） vicinal substrates by MOCVD. Photoluminescence measurements show that the dots on vicinal substrates have a much higher PL intensity and a narrower FWHM than those of dots on exact substrates, which indicates better material quality. To obtain 1.3μm emissions of InAs QDs, the role of the so called InGaAs strain cap layer （SCL） and the strain buffer layer （SBL） in the strain relaxation process in quantum dots is studied. While the use of SBL results only in a small change of emission wavelength,SCL can extend the QD＇s emission over 1.3μm due to the effective strain reducing effect of SCL.

A Wavelength Tunable DBR Laser Integrated with an Electro Absorption Modulator by a Combined Method of SAG and QWI

We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.

Contrastive study of two SESAMs for passive mode-locking in Nd:YVC>4 laser with low pump power

Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched mode-locking (QML) in low power pumped solid-state lasers. A simple Nd:YVO4 laser pumped by low power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ~ 20 mW

Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs

Homoepitaxial growth of4H-SiC on off-oriented Si-face （0001） 4H-SiC substrates was performed at 1500℃ by using the step controlled Epitaxy. Ti/4H-SiC Schottky barrier diodes （SBDs） with blocking voltage over lkV have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. The diode rectification ratio of forward to reverse （defined at ± 1V） is over 107 at room temperature and over 10^2 at 538K. Their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. The ideality factor and Schottky barrier height obtained at room temperature are 1.33 and 0. 905eV, respectively. The SBDs have on-state current density of 150A/cm^2 at a forward voltage drop of about 2.0V. The specific on-resistance for the rectifier is found to be as 7.9mΩ · cm^2 and its variation with temperature is T^2.0.

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

Modified Holographic Exposure to Fabricate Varied Bragg Grating in an Identical Chip

A new fabricating method is demonstrated to realize two different Bragg gratings in an identical chip using traditional holographic exposure. Polyimide is used to protect one Bragg grating during the first period. The technical process of this method is as simple as that of standard holographic exposure

A 12bit 300MHz Current-Steering CMOS D/A Converter

The proposed DAC consists of a unit current-cell matrix for 8MSBs and a binary-weighted array for 4LSBs, trading-off between the precision, speed, and size of the chip. In order to ensure the linearity of the DAC, a double Centro symmetric current matrix is designed by the Q2 random walk strategy. To achieve better dynamic performance, a latch is added in front of the current switch to change the input signal, such as its optimal cross-point and voltage level. For a 12bit resolution,the converter reaches an update rate of 300MHz.

Butt-Joint Monolithicaily Integrated DFB-LD/EA-MD Light Source for 10Gbit/s Transmission

This paper reports on the design, fabrication, and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application. This paper mainly aims at two aspects. One is to improve the optical coupling between the laser and modulator; another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator. The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA. Output power at 100mA is more than 10mW. The extinction characteristics,modulation bandwidth, and electrical return loss are measured. 3dB bandwidth more than 10GHz is monitored.

A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam

A GaAs-based micro-opto-electro-mech anical-systems(MOEMS) tunable resonant cavity enhanced(RCE)photodetector with a continuous tuning range of 31nm under a 6V tuning voltage is demonstrated. The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector. The maximum and minimum peak quantum efficiency during the tuning are 36.9 % and 30. 8 %, respectively. The maximum and minimum full-width-at-halfmaximum (FWHM) are 20nm and 14nm,respectively. The dark current density is 7.46A/m2 without bias.