A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs
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2005
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Resumo |
A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode (SLD) with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy (MOVPE). At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications. A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode (SLD) with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy (MOVPE). At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications. 于2010-11-23批量导入 zhangdi于2010-11-23 13:03:46导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:03:46Z (GMT). No. of bitstreams: 1 4371.pdf: 419105 bytes, checksum: e795e1c92f724fccd8fedb20b95b8be9 (MD5) Previous issue date: 2005 国家自然科学基金重大研究计划资助项目 Center of Optoelectronics Research & Development, Institute of Semiconductors, Chinese Academy of Sciences 国家自然科学基金重大研究计划资助项目 |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Ding Ying;Wang Wei;Kan Qiang;Wang Baojun;Zhou Fan.A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs,半导体学报,2005,26(12):2309-2314 |
Palavras-Chave | #光电子学 |
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期刊论文 |