Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers


Autoria(s): Deng Shengling; Huang Yongzhen; Jin Chaoyuan; Yu Lijuan
Data(s)

2005

Resumo

Quantum dot gain spectra based on harmonic oscillator model are calculated including and excluding excitons. The effects of non-equilibrium distributions are considered at low temperatures. The variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed. Also,the improvement of quantum dot lasers' performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density,is calculated.

Quantum dot gain spectra based on harmonic oscillator model are calculated including and excluding excitons. The effects of non-equilibrium distributions are considered at low temperatures. The variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed. Also,the improvement of quantum dot lasers' performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density,is calculated.

于2010-11-23批量导入

zhangdi于2010-11-23 13:03:57导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-23T05:03:57Z (GMT). No. of bitstreams: 1 4400.pdf: 420453 bytes, checksum: d170ae948a086530840e3acd8d6d5c3f (MD5) Previous issue date: 2005

国家高技术研究发展计划,国家自然科学基金

Institute of Semiconductors, Chinese Academy of Sciences

国家高技术研究发展计划,国家自然科学基金

Identificador

http://ir.semi.ac.cn/handle/172111/16871

http://www.irgrid.ac.cn/handle/1471x/103073

Idioma(s)

英语

Fonte

Deng Shengling;Huang Yongzhen;Jin Chaoyuan;Yu Lijuan.Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers,半导体学报,2005,26(10):1898-1904

Palavras-Chave #光电子学
Tipo

期刊论文