Fiber Bragg grating pressure sensor with ultrahigh sensitivity and reduced temperature sensitivity

A fiber Bragg grating (FBG) pressure sensing scheme based on a flat diaphragm and an L-shaped lever is presented. An L-shaped lever transfers the pressure-induced defection of the flat diaphragm to the axial elongation of the FBG. The curve where the L-shaped lever contacts the diaphragm is a segment of an Archimedes spiral, which is used to enhance the responsivity. Because the thermal expansion coefficient of the quartz-glass L-shaped lever and the steel sensor shell is different, the temperature effect is compensated for by optimizing the dimension parameters. Theoretical analysis is presented, and the experimental results show that an ultrahigh pressure responsivity of 244 pm/kPa and a low temperature responsivity of 2.8 pm/degrees C are achieved. (c) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI 10.1117/1.3081058]

Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers

We have fabricated 1.3-mu m InAs-GaAs quantum-dot (QD) lasers with and without p-type modulation doping and their characteristics have been investigated. We find that introducing p-type doping in active regions can improve the temperature stability of 1.3-mu m InAs-GaAs QD lasers, but it does not, increase the saturation modal gain of the QD lasers. The saturation modal gain obtained from the two types of lasers is identical (17.5 cm(-1)). Moreover, the characteristic temperature increases as cavity length increases for the two types of lasers, and it improves more significantly for the lasers with p-type doping due to their higher gain.

Temperature-independent FBG pressure sensor with high sensitivity

This study develops a fiber Bragg grating (FBG) pressure sensor partly shielded with a metal tube. The thermal-strain cross effect is avoided and its pressure sensitivity is increased to -2.44 x 10(-3) MPa, about 1200 times as that of a bare fiber grating. Due to its good sensing linearity, this sensor can be applied in the measurement of hydraulic pressure and vibration. (c) 2006 Elsevier Inc. All rights reserved.

Amorphous silicon nanoparticles in compound films grown on cold substrates for high-efficiency photoluminescence

Silicon nanoparticles have been fabricated in both oxide and nitride matrices by using plasma-enhanced chemical vapour deposition, for which a low substrate temperature down to 50 degreesC turns out to be most favourable. High-rate deposition onto such a cold substrate results in the formation of nanoscaled silicon particles, which have revealed an amorphous nature under transmission electron microscope (TEM) examination. The particle size can be readily controlled below 3.0 nm, and the number density amounts to over 10(12) cm(-2), as calculated from the TEM micrographs. Strong photoluminescence in the whole visible light range has been observed in the as-deposited Si-in-SiOx and Si-in-SiNx thin films. Without altering the size or structure of the particles, a post-annealing at 300 degreesC for 2 min raised the photoluminescence efficiency to a level comparable to the achievements with nanocrystalline Si-in-SiO2 samples prepared at high temperature. This low-temperature procedure for fabricating light-emitting silicon structures opens up the possibility of manufacturing integrated silicon-based optoelectronics.

Investigation on pressure sensitivity of fiber optic mandrel hydrophone - art. no. 659544

Pressure sensitivity of the fiber optic mandrel hydrophone is analyzed in this paper. Based on the theory of elasticity, the mechanism of the pressure response is studied. The influence of the optical fiber on the compliant mandrel on the pressure response is taken into consideration for the first time. The radial deformation of the mandrel under the pressure of the fiber optic and the underwater pressure is analyzed in details. Based on the theory of photo-elasticity, the phase shift of the Mach-Zehnder interferometer is given. The pressure sensitivity is evaluated both theoretically and experimentally, and the results show a good correlation between the theoretical and experimental results.

Determination of AlxGa1-xAs Auger sensitivity factors

AlxGa1-xAs Auger sensitivity factors have been determined by using PHI610 scanning Auger microprobe with pure elemental standards Al, Ag and matrix GaAs. The quantitative results of AlxGa1-xAs measured by the present method are in very good agreement with X-ray double crystal measurements. it is shown that by using sensitivity factors obtained from the self-instrument, the accuracy of the quantitative AES analysis can be considerably improved compared with that using elemental relative sensitivity factors given by the PHI handbook or internal standard method.

BACKGATING AND LIGHT SENSITIVITY IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Three different types of GaAs metal-semiconductor field effect transistors (MESFET) by employing ion implantation, molecular beam epitaxy (MBE) and low-temperature MBE (LT MBE) techniques respectively were fabricated and studied in detail. The backgating (sidegating) measurement in the dark and in the light were carried out. For the LT MBE-GaAs buffered MESFETs, the output resistance R(d) and the peak transconductance g(m) were measured to be above 50 k Omega and 140 mS/mm, respectively, and the backgating and light sensitivity were eliminated. A theoretical model describing the light sensitivity in these kinds of devices is given. and good agreement with experimental data is reached.

Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.

Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6

国家自然科学基金,国家863计划

A novel high sensitivity CE-PTHPT for optical fiber communication

Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8 mu m reached 1260 and 8108. The input noise current calculated is 5.46 x 10(-16) A/H-z(1/2). For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174 mu w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3 mu w at the wavelength of 1.55 mu m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.