BACKGATING AND LIGHT SENSITIVITY IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
Data(s) |
1995
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Resumo |
Three different types of GaAs metal-semiconductor field effect transistors (MESFET) by employing ion implantation, molecular beam epitaxy (MBE) and low-temperature MBE (LT MBE) techniques respectively were fabricated and studied in detail. The backgating (sidegating) measurement in the dark and in the light were carried out. For the LT MBE-GaAs buffered MESFETs, the output resistance R(d) and the peak transconductance g(m) were measured to be above 50 k Omega and 140 mS/mm, respectively, and the backgating and light sensitivity were eliminated. A theoretical model describing the light sensitivity in these kinds of devices is given. and good agreement with experimental data is reached. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
LI RG; WANG ZG; LIANG JB; REN GB; FAN TW; LIN LY .BACKGATING AND LIGHT SENSITIVITY IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ,JOURNAL OF CRYSTAL GROWTH,1995,150(0):1270-1274 |
Palavras-Chave | #半导体材料 |
Tipo |
期刊论文 |