Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6


Autoria(s): Cheng Buwen; Li Daizong; Huang Changjun; Zhang Chunhui; Yu Zhuo; Wang Yutian; Yu Jinzhong; Yang Qinqing; Wang Qiming
Data(s)

2000

Resumo

国家自然科学基金,国家863计划

Identificador

http://ir.semi.ac.cn/handle/172111/18603

http://www.irgrid.ac.cn/handle/1471x/103939

Idioma(s)

英语

Fonte

Cheng Buwen;Li Daizong;Huang Changjun;Zhang Chunhui;Yu Zhuo;Wang Yutian;Yu Jinzhong;Yang Qinqing;Wang Qiming.Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6,Semiconductor Photonics and Technology,2000,6(3):134

Palavras-Chave #光电子学
Tipo

期刊论文