IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES

GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on Si have been implanted with Si ions at 1.2 MeV to dose of 1 x 10(15)/cm2. A rapid infrared thermal annealing and white light annealing were then used for recrystallization. Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2 MeV. The experimental results show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers.

Electronic structure of microporous titanosilicate ETS-10

The electronic structure of a microporous titanosilicate framework, ETS-10 is calculated by means of a first-principles self-consistent method. It is shown that without the inclusion of the alkali atoms whose positions in the framework are unknown, ETS-10 is an electron deficient system with 32 electrons per unit cell missing at the top of an otherwise semiconductor-like band structure. The calculated density of slates are resolved into partial components. It is shown that the states of the missing electrons primarily originate from the Ti-O bond. The local density of states of the Ti-3d orbitals in the ETS-10 framework is quite different from the perovskite BaTiO3. The possibilities of ETS-10 crystal being ferroelectric or having other interesting properties are discussed.

Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning

A new technique is reported for the rapid determination of interstitial oxygen in heavily Sb-doped silicon. This technique includes wafer thinning and low-temperature 10 K infrared measurement on highly thinned wafers. The fine structure of the interstitial oxygen absorption band around 1136 cm(-1) is obtained. Our results show that this method efficiently reduces free-carrier absorption interference, allowing a high reliability of measurement, and can be used at resistivities down to 1 x 10(-2) Omega cm for heavily Sb-doped silicon.

A 10-bit 50-MS/s sample-and-hold circuit with low distortion sampling switches

A fully-differential switched-capacitor sample-and-hold (S/H) circuit used in a 10-bit 50-MS/s pipeline analog-to-digital converter (ADC) was designed and fabricated using a 0.35-μm CMOS process. Capacitor fliparound architecture was used in the S/H circuit to lower the power consumption. In addition, a gain-boosted operational transconductance amplifier (OTA) was designed with a DC gain of 94 dB and a unit gain bandwidth of 460 MHz at a phase margin of 63 degree, which matches the S/H circuit. A novel double-side bootstrapped switch was used, improving the precision of the whole circuit. The measured results have shown that the S/H circuit reaches a spurious free dynamic range (SFDR) of 67 dB and a signal-to-noise ratio (SNR) of 62.1 dB for a 2.5 MHz input signal with 50 MS/s sampling rate. The 0.12 mm~2 S/H circuit operates from a 3.3 V supply and consumes 13.6 mW.

面向高速应用的10位2GHz数模转换器

提出了一个刷新率达2GHz的10位电流驱动型数模转换器.在综合了精度与芯片面积等因素之后,该数模转换器使用6+4结构.采用电流型逻辑以提高转换器的速度,并采用Q~2 random walk方法设计了一个双中心对称的电流矩阵,确保数模转换器的线性度.该数模转换器核心版图面积为2.2mm×2.2mm,在3.3V单电压供电的情况下,该芯片功耗为790mW.

1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes

In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.

A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multiquantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

10 Gb／s电吸收调制器的微波封装设计

在高速光电子器件的微波封装过程中，需要综合考虑封装寄生参数和芯片寄生参数对器件高频性能的影响。利用封装寄生参数对芯片寄生参数的补偿作用，成功实现了10Gb／s电吸收调制激光器（EML）的高频封装。通过封装前后芯片和器件的小信号频率响应测试结果对比，器件的反射参数和传输参数有所改善，3dB带宽达到10GHz；并进行了10Gb／s速率的光纤传输实验，经过40km光纤传输后通道代价不到1dBm（误码率为10^-12），满足10Gb／s长距离光纤传输系统的要求。

一个10位、50MS/s CMOS折叠流水结构A/D转换器

在0.6μm DPDM标准数字CMOS工艺条件下,实现10位折叠流水结构A/D转换器,使用动态匹配技术,消除折叠预放电路的失调效应;提出基于单向隔离模拟开关的分步预处理,有效压缩了电路规模,降低了系统功耗.在5V电源电压下,仿真结果为:当采样频率为50MSPS时,功耗为120mW,输入模拟信号和二进制输出码之间延迟为2.5个时钟周期,芯片面积1.44mm2.

10*10nGaAsP/InP阵列波导光栅器件的研制

研制了脊形波导结构的10*10InGaAsP/InP阵列波导光栅器件（AWG），并采用掺饵光纤放大器（EDFA）作宽带光源测量了AWG的近场图以及分光特性。

反射率小于10~（-4）的1310nm光电子器件增透膜技术的研究

阐述了电子回旋共振等离子体化学气相沉积法淀积半导体器件端面光学膜的优良特性。介绍了淀积反射率小于10~(-4)的1310nm半导体激光器端面增透膜技术，并对这种技术的优点和两端淀积增透膜后的激光器特性进行了讨论。

能量转换效率达10.2%的非晶硅单结太阳能电池

于2010-11-23批量导入