ANOMALOUS ION CHANNELING EFFECTS IN INGAAS/GAAS STRAINED HETEROJUNCTIONS

Autoria(s): WU CW; YIN SD; ZHANG JP; XIAO GM; LIU JR; ZHU PR
Data(s)

1990
Identificador

http://ir.semi.ac.cn/handle/172111/14411

http://www.irgrid.ac.cn/handle/1471x/101240
Idioma(s)

英语
Fonte

WU CW; YIN SD; ZHANG JP; XIAO GM; LIU JR; ZHU PR.ANOMALOUS ION CHANNELING EFFECTS IN INGAAS/GAAS STRAINED HETEROJUNCTIONS,CHINESE PHYSICS,1990,10(1):55-62
Palavras-Chave #半导体物理
Tipo

期刊论文
Acesso ao item digital