Silicon thin films prepared in the transition region and their use in solar cells

Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the nc-Si/a-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. The blue shift for the stretching mode and red shift for the wagging mode in the IR spectra also show the variation of the microstructure. By using this kind of film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51 % and a stabilized efficiency of 8.01% (AM 1.5, 100 mw/cm(2)) at room temperature. (c) 2006 Published by Elsevier B.V.

Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

A V-shaped module technique for promoting generation photocurrent density of silicon solar cells

A V-shaped solar cell module consists of two tilted mono-crystalline cells [J. Li, China Patent No. 200410007708.6 (March, 2004)]. The angle included between the two tilted cells is 90 degrees. The two cells were fabricated by using polished silicon wafers. The scheme of both-side polished wafers has been proposed to reduce optical loss. Compared to solar cells in a planar way, the V-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. The following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating.

Circuit design and simulation of a CMOS-based preamplifier for brain neural signals

A novel CMOS-based preamplifier for amplifying brain neural signal obtained by scalp electrodes in brain-computer interface (BCI) is presented in this paper. By means of constructing effective equivalent input circuit structure of the preamplifier, two capacitors of 5 pF are included to realize the DC suppression compared to conventional preamplifiers. Then this preamplifier is designed and simulated using the standard 0.6 mu m MOS process technology model parameters with a supply voltage of 5 volts. With differential input structures adopted, simulation results of the preamplifier show that the input impedance amounts to more than 2 Gohm with brain neural signal frequency of 0.5 Hz-100 Hz. The equivalent input noise voltage is 18 nV/Hz(1/2). The common mode rejection ratio (CMRR) of 112 dB and the open-loop differential gain of 90 dB are achieved.

超声化学法合成稀土纳米材料

稀土纳米材料因其独特的光、电、磁和催化等性能，在纳米器件和功能材料等诸多领域具有重要的应用价值。大量研究表明，纳米材料的物理和化学性质与其尺寸、成分、形貌和晶型密切相关。稀土纳米材料的合成方法有许多，然而，要真正实现这类材料的简单可控合成仍然是个艰难的课题。超声化学法由于具有操作简单、合成周期短、反应温度低、成本低廉并且产物均匀、粒径分布窄和纯度高等突出优点，已经在无机纳米材料制备领域中显示出独特的魅力。因此，本论文的工作是运用超声化学法合成有广泛应用前景的稀土纳米材料，对产物的形貌和粒径进行有效的调控，研究和分析其形成机理，并进一步考察其形貌、结构与性能之间的相互关系。 在本论文中，我们研究的体系集中在稀土磷酸盐、稀土氟化物和稀土钒酸盐三类纳米材料。 采用超声化学法得到的CePO4:Tb和CePO4:Tb/LaPO4(核/壳)纳米棒结晶完好，具有CePO4体材料的六方相结构。CePO4:Tb纳米棒直径为10-30 nm，长度为200 nm，CePO4:Tb/LaPO4(核/壳)纳米棒的LaPO4壳的厚度为2-10 nm。CePO4:Tb和CePO4:Tb/LaPO4(核/壳)纳米棒均具有Ce3+ (5d - 4f)和Tb3+ 5D4-7FJ(J = 6-3)的特征发射。与CePO4:Tb纳米棒核相比，CePO4:Tb/LaPO4(核/壳)纳米棒的光谱强度及荧光寿命均有较大的提高，这是由于形成核/壳结构后发光中心镧系金属离子与表面淬灭中心的距离增大，减少了能量传递过程中非辐射复合的路径，使能量淬灭受到抑制。 采用简单、快速、无模板辅助的超声化学法合成了稀土氟化物，并对产物的形貌和粒径进行了有效的调控。通过应用不同氟源(KBF4、NaF和NH4F)选择性合成了具有不同形貌的CeF3纳米材料，如片状、棒状和颗粒状。对具有不同形貌的CeF3样品进行了UV-Vis吸收光谱和荧光光谱测试和比较。研究结果表明不同形貌的样品，它们的光学性质存在很大差异，这说明纳米材料的光学性质与其形貌、粒径、晶体结构等因素有密切的关系。得到的EuF3单晶纳米材料具有三维花状形貌。这些纳米花的外形为球状，平均直径为0.9 μm-1.0 μm，每个花瓣的厚度约为0.14 μm。在其他实验条件不变的情况下，采用搅拌法而不经过超声辐射的对比实验只能得到二维纳米片，这表明超声辐射对花状EuF3的形成起到了至关重要的作用。基于不同反应时间的实验结果，我们提出了这种三维花状EuF3纳米材料可能的形成机理。 采用超声化学法选择性地合成了介孔及棒状CeVO4和纺锤状的YVO4:Eu3+ 纳米材料。CeVO4纳米棒的平均直径为5 nm，长度为150 nm。介孔CeVO4材料的比表面积较高(122 m2•g-1)，孔径分布窄，其催化性能有望得到提高。纺锤状的YVO4:Eu3+ 纳米粒子具有四方相锆石结构，其直径为90-150 nm，长度为250-300 nm。超声辐射对样品的形貌起着关键作用，在其他反应条件不变，未采用超声辐射的情况下只能得到团聚严重的纳米颗粒。荧光测试表明，纺锤状YVO4:Eu样品表现为Eu3+ 5D0-7FJ(J = 1- 4)的特征跃迁，以5D0-7F2电偶极跃迁(614nm)为最强峰，属于红光发射。

藏酋猴(Macaca thibetana)电刺激采精、精液冻存和精子活力的检测

本文研究中国特有的藏酋猴(Macaca thibetana)电刺激采精、精液冻存及精子活力检测。用电刺激方案[(DDR)_(17-c)V]：延搁(delay)17毫秒、间期(duration)17毫秒、刺激频率17脉冲／秒、单方波变电压连续刺激，对笼养藏酋猴进行电刺激采精，测定精液的各种特征参数，包括每次射精量、液化率、精子密度、运动精子的百分率、死活精子以及异常精子比例。并与其它非人灵长类进行了比较。在精液冻存实验中，通过对不同的防冻液、不同的降温程序及防冻液分散系的比较研究，从而确定了适于藏酋猴精液冻存的冻存方案：PSF-4%的甘油-TH-7.5%的小牛血清(PSF-TH/FBS-G)和PSF-MDM。用前一方案冻存藏酋猴精液，复苏运动度为63.58±0.06%；精子的存活率为90.14±0.03%(n=5)。冻存精液用金黄地鼠裸穿透分析法检测，结果表明具有相应新鲜精液穿透力的51.90±0.08%。后一冻存方案能保存88.00±1.03%的运动精子，但运动寿命较短。研究结果表明：1).刺激方案(DDR)_(17-c)V适于藏酋猴的电刺激采精。2).藏酋猴的精液量和精子数在已有过研究的非人灵长类动物中是最多的，藏酋猴有可能成为较理想的精子生物学研究用的非人灵长类动物。3).脂蛋白对维持精子膜的完整可能有重要作用。4).接近生理条件的防冻剂分散系有助于精液的冻存。5).两种冻存方案PSF-TH/FBS-G和PSF-MDM均适于藏酋猴的精液冻存。

INFLUENCE OF THE 90-DEGREES PARTIAL DISLOCATION CORE STRUCTURE IN SILICON ON ENERGY-LEVELS

An LCAO-scheme taking into account 10 atomic orbitals (s-, p-, and d-type) is used to calculate the electronic structure of the reconstructed 90-degrees partial dislocation in Si. Two different valence force fields producing deviating results are used for modelling the core structure. Geometrical data published by another group is also used. The aim is to explore the influence of geometry on energy levels. We find that the band structure depends sensitively on bond angles. Using data determined by the Tersoff potential we obtain two bands of which the upper one penetrates deeply into the indirect band gap while the geometry minimizing the simple Keating potential leaves the gap completely clear of dislocation states. Thus, from a theoretical point of view, the chief difficulty in calculating the electronic structure of the reconstructed 90-degrees partial is the lack of accurate structural information.

ENERGY-LEVEL CALCULATIONS OF THE RECONSTRUCTED 90-DEGREES PARTIAL DISLOCATION IN SILICON

An LCAO scheme taking into account 10 atomic orbitals (s-, p-, and d-type) applied to a supercell containing 256 atoms is used to calculate the bound states of the reconstructed 90-degrees partial dislocation in Si. The results differ significantly from our earlier calculations on the unreconstructed 90-degrees partial using the same method. We find two bands separate from each other in the entire Brillouin zone and the upper band penetrates deep into the indirect band gap which is in contradiction with the general opinion that core reconstruction clears the band gap of dislocation states.

ELECTRON-STATES OF A VACANCY IN THE CORE OF THE 90-DEGREES PARTIAL DISLOCATION IN SILICON

An LCAO scheme (linear combination of atomic orbitals) taking into account ten atomic orbitals (s-, p-, and d-type) is used to calculate the electronic structure of a vacancy present in the core of the reconstructed 90 degrees partial dislocation in silicon. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. The three-fold degenerate stale of the ideal vacancy is split into three levels with energies 0.26, 1.1, and 1.9 eV measured from the valence band edge.

InP/Si键合界面热应力分析

从理论上分析了键合热应力产生的原因,在此基础上,采用双层条状金属热应力模型讨论InP/Si键合过程中应力的大小及分布情况.结果表明, 由剪切应力和晶片弯矩决定的界面正应力是晶片中心区域大面积键合失败的主要原因,同时InP/Si键合合适的退火温度应该在250～300 ℃.最后在300 ℃退火条件下很好地实现了InP/Si键合,界面几乎没有气泡,有效键合面积超过90%.

岷江上游地区景观格局优化

岷江上游是我国十分典型的山地生态脆弱区。该地区的生态环境意义十分重大，既是长江上游生态屏障的重要组成部分，更是成都平原的重要生态屏障和水源生命线，其生态环境状况直接影响成都平原水资源的质量和数量，以至影响到整个岷江流域甚至整个长江上游的生态环境与社会经济发展。对岷江上游的生态服务和景观格局的变化进行分析和优化得到如下主要结论： 1岷江上游地区近几十年来土地利用发生了很大的变化，农田面积显著增加，森林面积减少，草地有所增加；研究区总体生态服务价值减少了771.11亿元。对岷江上游各时期的生态服务功能经济价值的计算和比较，研究表明应对土地利用结构进行相应的、有区别的调整，实施退耕还林还草，以优化岷江上游地区的生态服务功能，还应该实施计划生育政策；应增加蔬菜瓜果的种植面积，增加当地的经济收入。 2岷江上游地区在1986年水源涵养量最高，1995年水源涵养量下降，造成这一现象的主要原因是20世纪90年代岷江上游森林景观受到人为的严重破坏，1998年实施“天然林保护工程”与“退耕还林还草”的政策，加强了人工造林，改善了森林生态系统，使森林生态系统水源涵养量有所恢复，使得2000年水源涵养量及经济价值与1995年基本持平。 3分布在岷江上游的大中型兽类中，有5种野生动物在此地绝迹。造成这一现象的主要原因是人口的增加、经济的发展使人类对生态环境的压力加大，减少了野生动物的适宜生境。降低了生物多样性，适宜斑块进一步破碎化，核心区面积减少且距离进一步加大。因此，为改善现状，在岷江上游地区应大力推动科技发展，减少人类活动对生态环境的破坏，发展经济与生态保护并重。 4结合灰色线形规划和CLUE-S模型对岷江上游地区的景观格局进行合理规划，结果表明：岷江上游景观格局优化配置应将灌木林地、草地和耕地恢复到林地，综合治理干旱河谷，保持区域经济可持续发展。优化结果有林地面积增加15.38%；灌木林地面积减少最多，减少22.84%；农田减少28.84%和草地减少5.65%；城镇等居民用地有所增加。