Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells
| Data(s) |
2006
|
|---|---|
| Resumo |
A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved. A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 New Univ Lisbon, Dept Mat Sci, P-2829516 Caparica, Portugal; New Univ Lisbon, CEMOP, UNINOVA, Fac Sci & Technol, P-2829516 Caparica, Portugal; Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China; Kunming Inst Phys, Kunming, Yunnan, Peoples R China |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| Fonte |
Hu, ZH (Hu, Zhihua); Liao, XB (Liao, Xianbo); Diao, HW (Diao, Hongwei); Cai, Y (Cai, Yi); Zhang, SB (Zhang, Shibin); Fortunato, E (Fortunato, Elvira); Martins, R (Martins, Rodrigo) .Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells .见：ELSEVIER SCIENCE BV .JOURNAL OF NON-CRYSTALLINE SOLIDS,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS , JUN 15 2006,352 (9-20): 1900-1903 |
| Palavras-Chave | #半导体材料 #silicon |
| Tipo |
会议论文 |
