Circuit design and simulation of a CMOS-based preamplifier for brain neural signals


Autoria(s): Sui XH; Pei WH; Gu M; Liu JB; Chen HD
Data(s)

2005

Resumo

A novel CMOS-based preamplifier for amplifying brain neural signal obtained by scalp electrodes in brain-computer interface (BCI) is presented in this paper. By means of constructing effective equivalent input circuit structure of the preamplifier, two capacitors of 5 pF are included to realize the DC suppression compared to conventional preamplifiers. Then this preamplifier is designed and simulated using the standard 0.6 mu m MOS process technology model parameters with a supply voltage of 5 volts. With differential input structures adopted, simulation results of the preamplifier show that the input impedance amounts to more than 2 Gohm with brain neural signal frequency of 0.5 Hz-100 Hz. The equivalent input noise voltage is 18 nV/Hz(1/2). The common mode rejection ratio (CMRR) of 112 dB and the open-loop differential gain of 90 dB are achieved.

A novel CMOS-based preamplifier for amplifying brain neural signal obtained by scalp electrodes in brain-computer interface (BCI) is presented in this paper. By means of constructing effective equivalent input circuit structure of the preamplifier, two capacitors of 5 pF are included to realize the DC suppression compared to conventional preamplifiers. Then this preamplifier is designed and simulated using the standard 0.6 mu m MOS process technology model parameters with a supply voltage of 5 volts. With differential input structures adopted, simulation results of the preamplifier show that the input impedance amounts to more than 2 Gohm with brain neural signal frequency of 0.5 Hz-100 Hz. The equivalent input noise voltage is 18 nV/Hz(1/2). The common mode rejection ratio (CMRR) of 112 dB and the open-loop differential gain of 90 dB are achieved.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

Huazhong Univ Sci & Technol.; Arizona State Univ.; Tsinghua Univ.

Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

Huazhong Univ Sci & Technol.; Arizona State Univ.; Tsinghua Univ.

Identificador

http://ir.semi.ac.cn/handle/172111/10124

http://www.irgrid.ac.cn/handle/1471x/66063

Idioma(s)

英语

Publicador

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

Fonte

Sui, XH; Pei, WH; Gu, M; Liu, JB; Chen, HD .Circuit design and simulation of a CMOS-based preamplifier for brain neural signals .见:IEEE .2005 First International Conference on Neural Interface and Control Proceedings,345 E 47TH ST, NEW YORK, NY 10017 USA ,2005,108-110

Palavras-Chave #光电子学 #BCI
Tipo

会议论文