A V-shaped module technique for promoting generation photocurrent density of silicon solar cells
Data(s) |
2004
|
---|---|
Resumo |
A V-shaped solar cell module consists of two tilted mono-crystalline cells [J. Li, China Patent No. 200410007708.6 (March, 2004)]. The angle included between the two tilted cells is 90 degrees. The two cells were fabricated by using polished silicon wafers. The scheme of both-side polished wafers has been proposed to reduce optical loss. Compared to solar cells in a planar way, the V-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. The following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating. A V-shaped solar cell module consists of two tilted mono-crystalline cells [J. Li, China Patent No. 200410007708.6 (March, 2004)]. The angle included between the two tilted cells is 90 degrees. The two cells were fabricated by using polished silicon wafers. The scheme of both-side polished wafers has been proposed to reduce optical loss. Compared to solar cells in a planar way, the V-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. The following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating. zhangdi于2010-03-29批量导入 Made available in DSpace on 2010-03-29T06:06:31Z (GMT). No. of bitstreams: 1 2417.pdf: 138807 bytes, checksum: d31c5be83e90bc02bb8818f21ac5f0b7 (MD5) Previous issue date: 2004 Chinese Phys Soc.; Shanghai Phys Soc.; Natl Nat Sci Fdn China.; E China Normal Univ, Sch Informat Sci & Technol.; Fudan Univ, Appl Surface Phys Lab.; Natl Lab Infrared Phys.; CAS, Shanghai Inst Tech Phys.; E China Normal Univ, Key Lab Opt & Magnet Resonance Spectroscopy. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China Chinese Phys Soc.; Shanghai Phys Soc.; Natl Nat Sci Fdn China.; E China Normal Univ, Sch Informat Sci & Technol.; Fudan Univ, Appl Surface Phys Lab.; Natl Lab Infrared Phys.; CAS, Shanghai Inst Tech Phys.; E China Normal Univ, Key Lab Opt & Magnet Resonance Spectroscopy. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
Fonte |
Li, JM; Chong, M; Duan, XF; Xu, JD; Gao, M; Wang, FL .A V-shaped module technique for promoting generation photocurrent density of silicon solar cells .见:SPIE-INT SOC OPTICAL ENGINEERING .FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2004,5774: 466-469 |
Palavras-Chave | #半导体材料 #silicon #solar cells #V-shaped structure |
Tipo |
会议论文 |