Quantum-confinement-effect-driven type-I-type-II transition in inhomogeneous quantum dot structures

We investigate the electronic structures of the inhomogeneous quantum dots within the framework of the effective mass theory. The results show that the energies of electron and hole states depend sensitively on the relative magnitude 77 of the core radius to the capped quantum dot radius. The spatial distribution of the electrons and holes vary significantly when the ratio eta changes. A quantum-confinement-driven type-II-type-I transition is found in GaAs/AlxGa1-xAs-capped quantum dot structures. The phase diagram is obtained for different capped quantum dot radii. The ground-state exciton binding energy shows a highly nonlinear dependence on the innner structures of inhomogeneous quantum dots, which originates from the redistribution of the electron and hole wave functions.

Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices

We investigate the transition from static to dynamic electric field domains (EFDs) in a doped GaAs/AlAs superlattice (SL). We show that a transverse magnetic field and/or the temperature can induce current self-oscillations. This observation can be attributed to the negative differential resistance (NDR) effect. Transverse magnetic field and the temperature can increase the NDR of a doped SL. A large NDR can lead to an unstable EFD in a certain range of d.c. bias. (C) 1999 Elsevier Science Ltd. All rights reserved.

Radiative transition in delta-doped GaAs superlattices

Radiative transition in delta-doped GaAs superlattices with a weak coupling was investigted at low temperature, The experimental results show that the transitions from both electron ground state and excited state to hole state have been observed, Based on the effective mass approximation theory, the structures of energy band and photoluminescence spectra for the samples used were calculated. Comparing the experiment with theory, a good agreement was abtained.

Linewidth of the infrared absorption spectra due to bound-to-continuum transition in GaAs/AlxGa1-xAs multiple quantum well structures

We have observed an extremely narrow absorption spectrum due to bound-to-continuum transition in GaAs/AlxGa1-xAs multiple quantum wells (MQWs). Its linewidth is only about one tenth of the values reported previously. Our calculation indicates that the broadening of the excited state in the continuum has little contribution to the absorption linewidth. We have grown a sample whose MQW region contains two kinds of wells with a minor thickness inhomogeneity. Its resultant absorption linewidth is six times as large as that of homogeneous well sample, which is in good agreement with our theoretical analysis. Thus we can suggest that the wider absorption spectra reported by many authors may be due to the well width inhomogeneity. (C) 1998 American Institute of Physics. [S0003-6951(98)03430-5]

Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors

The traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors ( SET) has been considered three states (including an excited state) of the discrete quantum energy levels. The simulation results show negative differential conductance (NDC) characteristics in I-DS-V-DS curve. The SET-MOBILE utilizing NDC characteristics can successfully realize the basic logic functions as the RTD-MOBILE.

Silicon thin films prepared in the transition region and their use in solar cells

Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the nc-Si/a-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. The blue shift for the stretching mode and red shift for the wagging mode in the IR spectra also show the variation of the microstructure. By using this kind of film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51 % and a stabilized efficiency of 8.01% (AM 1.5, 100 mw/cm(2)) at room temperature. (c) 2006 Published by Elsevier B.V.

Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

STATE MIXING IN INAS/GAAS QUANTUM DOTS AT THE PRESSURE-INDUCED GAMMA-X CROSSING

于2010-11-17批量导入

Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline

A kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) near the phase transition regime from amorphous to nanocrystalline. The microstructural properties of the films have been investigated by the micro-Raman and Fourier transformed Infrared (FT-IR) spectra and atom force microscopy (AFM). The obtained Raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. For the FT-IR spectra of this kind of films, it notes that there is a blueshift in the Si-H stretching mode and a redshift in the Si-H wagging mode in respect to that of typical amorphous silicon film. We discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, H-2* and their congeries.

Formation of an fcc phase through a bcc metastable state in crystallization of charged colloidal particles

By in situ monitoring structural changes with the reflection spectrometer during the colloidal crystallization, we present direct experimental evidence of liquid-bcc-fcc phase transition in crystallization of charged colloidal particles, as a manifestation of the Ostwald's step rule. In addition, the lifetime of the bcc metastable structure in this system decreases significantly with increasing particle volume fraction, offering a possible explanation for "exceptions" to the step rule.

Phase transition to color-flavor-locked matter and condensation of Goldstone bosons in neutron star matter

Deconfinement phase transition and condensation of Goldstone bosons in neutron star matter are investigated in a chiral hadronic model (also referred as to the FST model) for the hadronic phase (HP) and in the color-flavor-locked (CFL) quark model for the deconfined quark phase. It is shown that the hadronic-CFL mixed phase (MP) exists in the center of neutron stars with a small bag constant, while the CFL quark matter cannot appear in neutron stars when a large bag constant is taken. Color superconductivity softens the equation of state (EOS) and decreases the maximum mass of neutron stars compared with the unpaired quark matter. The K-0 condensation in the CFL phase has no remarkable contribution to the EOS and properties of neutron star matter. The EOS and the properties of neutron star matter are sensitive to the bag constant B, the strange quark mass m(s) and the color superconducting gap Delta. Increasing B and m(s) or decreasing Delta can stiffen the EOS which results in the larger maximum masses of neutron stars.

Friction phenomena and phase transition in the underdamped two-dimensional Frenkel-Kontorova model

Locked-to-sliding phase transition has been studied in the driven two-dimensional Frenkel-Kontorova model with the square symmetric substrate potential. It is found that as the driving force increases, the system transfers from the locked state to the sliding state where the motion of particles is in the direction different from that of driving force. With the further increase in driving force, at some critical value, the particles start to move in the direction of driving force. These two critical forces, the static friction or depinning force, and the kinetic friction force for which particles move in the direction of driving force have been analyzed for different system parameters. Different scenarios of phase transitions have been examined and dynamical phases are classified. In the case of zero misfit angle, the analytical expressions for static and kinetic friction force have been obtained.

Isospin dependence of the nuclear equation of state near the critical point

We discuss experimental evidence for a nuclear phase transition driven by the different concentrations of neutrons to protons. Different ratios of the neutron to proton concentrations lead to different critical points for the phase transition. This is analogous to the phase transitions occurring in He-4-He-3 liquid mixtures. We present experimental results that reveal the N/A (or Z/A) dependence of the phase transition and discuss possible implications of these observations in terms of the Landau free energy description of critical phenomena.

Spontaneous volume transition of polyampholyte nanocomposite hydrogels based on pure electrostatic interaction

A circular system is employed in this paper to investigate the swelling behaviors of polyampholyte hydrogels; this circular system can effectively eliminate the disturbance of various factors and keep the surrounding environment constant. It is found that there exists a spontaneous volume transition to the collapsed state of polyampholyte hydrogels, which is attributed to the overshooting effect, and the transition can occur repeatedly under certain conditions. C-13 NMR is employed to investigate the swelling behavior of polyampholyte hydrogels.

Electronic and mechanical properties of 5d transition metal mononitrides via first principles

The electronic and mechanical properties of 5d transition metal mononitrides from LaN to AuN are systematically investigated by use of the density-functional theory. For each nitride, Six Structures are considered, i.e., rocksalt, zinc blende, CsCl, wurtzite, NiAs and WC structures. Among the considered structures, rocksalt structure is the most stable for LaN, HfN and ALIN, WC structure for TaN, NiAs structure for WN, wurtzite structure for ReN, OsN, IrN and PtN. The most stable Structure for each nitride is mechanically stable. The formation enthalpy increases from LaN to AuN.