STATE MIXING IN INAS/GAAS QUANTUM DOTS AT THE PRESSURE-INDUCED GAMMA-X CROSSING


Autoria(s): LI GH; GONI AR; SYASSEN K; BRANDT O; PLOOG K
Data(s)

1994

Resumo

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CHINESE ACAD SCI,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA

Identificador

http://ir.semi.ac.cn/handle/172111/15605

http://www.irgrid.ac.cn/handle/1471x/101841

Idioma(s)

英语

Fonte

LI GH; GONI AR; SYASSEN K; BRANDT O; PLOOG K .STATE MIXING IN INAS/GAAS QUANTUM DOTS AT THE PRESSURE-INDUCED GAMMA-X CROSSING ,PHYSICAL REVIEW B,1994,50(24):18420-18425

Palavras-Chave #半导体物理 #DIAMOND-ANVIL CELL #HYDROSTATIC-PRESSURE #ELECTRONIC-STRUCTURE #OPTICAL-PROPERTIES #GAAS MATRIX #SUPERLATTICES #SPECTROSCOPY #TRANSITION #EXCITONS
Tipo

期刊论文