Radiative transition in delta-doped GaAs superlattices


Autoria(s): Cheng WC; Xia JB; Li GH; Tan PH; Zheng HZ
Data(s)

1999

Resumo

Radiative transition in delta-doped GaAs superlattices with a weak coupling was investigted at low temperature, The experimental results show that the transitions from both electron ground state and excited state to hole state have been observed, Based on the effective mass approximation theory, the structures of energy band and photoluminescence spectra for the samples used were calculated. Comparing the experiment with theory, a good agreement was abtained.

Identificador

http://ir.semi.ac.cn/handle/172111/12982

http://www.irgrid.ac.cn/handle/1471x/65461

Idioma(s)

中文

Fonte

Cheng WC; Xia JB; Li GH; Tan PH; Zheng HZ .Radiative transition in delta-doped GaAs superlattices ,JOURNAL OF INFRARED AND MILLIMETER WAVES ,1999,18(1):89-92

Palavras-Chave #光电子学 #delta-doping #superlattices #radiative transition #SI #BAND-GAP
Tipo

期刊论文