Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices


Autoria(s): Wang JN; Sun BQ; Wang XR; Wang HL
Data(s)

1999

Resumo

We investigate the transition from static to dynamic electric field domains (EFDs) in a doped GaAs/AlAs superlattice (SL). We show that a transverse magnetic field and/or the temperature can induce current self-oscillations. This observation can be attributed to the negative differential resistance (NDR) effect. Transverse magnetic field and the temperature can increase the NDR of a doped SL. A large NDR can lead to an unstable EFD in a certain range of d.c. bias. (C) 1999 Elsevier Science Ltd. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/12788

http://www.irgrid.ac.cn/handle/1471x/65364

Idioma(s)

英语

Fonte

Wang JN; Sun BQ; Wang XR; Wang HL .Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices ,SOLID STATE COMMUNICATIONS,1999,112(7):371-374

Palavras-Chave #半导体物理 #semiconductors #tunneling #ELECTRIC-FIELD DOMAINS #DOPED SEMICONDUCTOR SUPERLATTICES #MODEL #INSTABILITIES #DIODES #GAAS-ALAS SUPERLATTICES
Tipo

期刊论文