黄土丘陵区不同土地利用方式下土壤水分入渗的对比试验

为更好地掌握黄土丘陵区不同土地利用方式下的土壤水分入渗性能,采用双环法和人工降雨法,分别对陕西省延安市燕沟流域林地、草地、农地3种土地利用方式的土壤水分入渗过程进行了对比试验。结果表明:双环法能较好的反映水向土中的入渗过程;而人工降雨法可以较为真实地反映天然降雨过程中雨水向土中的入渗过程, 两者有很大的不同,主要表现在土壤水分的入渗速率变化过程方面。前者测定的土壤水分入渗速率主要受制于土壤的物理性状,而后者:不但与土壤物理性状有关,还与降雨强度有较密切的关系。在人工模拟短历时暴雨条件下, 对于林地和荒坡草地,土壤水分入渗速率有随雨强增大而增大的趋势,而对于裸耕农地,随着雨强的增大,土壤水分入渗速率有降低的趋势。

黄土丘陵区不同立地达乌里胡枝子群落水分特征及生物量研究

对黄土高原丘陵沟壑区不同立地条件下的达乌里胡枝子群落水分特征及生物量进行了研究.结果表明:(1)不同立地下的达乌里胡枝子蒸腾日变化均呈单峰型,上午呈上升趋势,于13:00达到峰值,之后均呈不同程度下降趋势.(2)不同立地达乌里胡枝子群落0~200 cm土层平均含水量为阴坡12.34%,半阳坡11.29%,半阴坡11.15%,阳坡8.96%.不同立地达乌里胡枝子叶片相对含水量和饱和亏与各立地土壤含水量关系密切.(3)不同立地下各个时期的达乌里胡枝子群落的地上生物量表现为阴坡>半阴坡>半阳坡>阳坡,地下生物量则表现为阳坡(447.39 g/m2)>半阳坡(409.12 g/m2)>半阴坡(344.92 g/m2)>阴坡(217.01 g/m2).可见,达乌里胡枝子群落的水分生理特性及生物量的积累与立地条件密切相关.

Deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

Capacitance-voltage, photoluminescence (PL), and deep level transient spectroscopy techniques were used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular beam epitaxy. The integrated intensity of the PL spectra obtained from Al-doped ZnS0.977Te0.023 is lower than that of undoped ZnS0.977Te0.023, indicating that some of the Al atoms form nonradiative deep traps. Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x=0, 0.017, 0.04, and 0.046, respectively) epilayers reveal that Al doping leads to the formation of two electron traps 0.21 and 0.39 eV below the conduction band. DLTFS results suggest that in addition to the roles of Te as a component of the alloy as well as isoelectronic centers, Te is also involved in the formation of an electron trap, whose energy level with respect to the conduction band decreases as Te composition increases. Our results show that only a small fraction of Al atoms forms nonradiative deep defects, indicating clearly that Al is indeed a very good donor impurity for ZnS1-xTex epilayers in the range of Te composition being studied in this work. (C) 1997 American Institute of Physics. [S0021-8979(97)08421-1].

5.3-W Nd:YVO_4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM), and the pulse repetition rate is 83 MHz.

Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector

A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2～1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times.

MOCVD生长的未掺杂的In_（1-x）Ga_xP中的本征缺陷

于2010-11-23批量导入

分子束外延生长的n型Al掺杂ZnS_(1-x)Te_x深中心研究

应用电容-电压、光致荧光和深能级瞬态谱技术研究了分子束外延生长的n型Al掺杂ZnS_(1-x)Te_x外延层深中心。Al掺杂ZnS_(0.977)Te_(0.023)的光致荧光强度明显低于不掺杂的ZnS_(0.977)Te_(0.023),这表明一部分Al原子形成非辐射深中心。Al掺杂ZnS_(1-x)Te_x(x=0,0.017,0.04和0.046)的深能级瞬态傅里叶谱表明，Al引进导带下的0.21和0.39eV电子陷阱，Te除了作为材料合金的成分和等电子中心外，还涉及到一个电子陷阱的形成，其相对导带的能级位置随Te组分增加而减小。实验结果还表明仅有少量掺杂的Al原子形成非辐射中心，这说明Al对于Te组分范围内(x≤0.046)的ZnS_(1-x)Te_x外延层的确是一种非常好的施主杂质。

Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

Deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular fiction epitaxy (MBE), Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that At doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction hand. 1)DLTFS results suggest that in addition to the rules of Te as a component of [lie alloy as well as isoelectronic centers, Te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, Te composition increases.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.