Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

The development of a fast neutron spectrometer using silicon surface barrier diodes /

"Published August 1961."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Investigation of silicon photocells as converters of solar radiation (Issledovaniye kremniyevykh fotoelementov kak preobrazovately solnechnogo izlucheniya)

"This translation was prepared under the auspices of the Liaison Office, Technical Information Center, Wright-Patterson AFB, Ohio."

Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication /

"Issued May 1980."

An automated photovoltaic system for the measurement of resistivity variations, in high-resistivity circular silicon slices /

Includes bibliographical references.

Permanent damage effects of nuclear radiation on the X-band performance of silicon Schottky-barrier microwave mixer diodes /

S/N 003-003-01635-7.

Silicon carbide for semiconductors /

"February 1965."

A study of some low frequency applications of silicon capacitors. Internal research.

Mode of access: Internet.

G-factor and donor spin-lattice relaxation for electrons in germanium and silicon.

"This group report is based on an article submitted to the Physical review."

Neutron cross sections for titanium, potassium, magnesium, nitrogen, aluminum, silicon, sodium, oxygen, and manganese : final report covering the period 20 March, 1961 - 31 January, 1962 /

"For the U.S. Army Chemical Corps Nuclear Defense Laboratory"--Fore.

Growth and mechanical properties of filamentary silicon carbide crystals

"Directorate of Materials and Processes, Contract no. AF33(616)-7005, Project no. 7340."

Spreading resistance analysis for silicon layers with nonuniform resistivity /

"Issued May 1979."

Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs

The measured inter-electrode capacitances of silicon-on-sapphire (SOS) MOSFETs are presented and compared with simulation results. It is shown that the variations of capacitances with DC bias differ from those of bulk MOSFETs due to change in body potential variation of the SOS device resulting from electron-hole pair generation through impact ionisation.