Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication /
| Data(s) |
02/07/1980
|
|---|---|
| Resumo |
"Issued May 1980." Includes bibliographical references. Mode of access: Internet. |
| Formato |
bib bib bib |
| Identificador |
http://hdl.handle.net/2027/mdp.39015077585977 http://hdl.handle.net/2027/uiug.30112075693611 http://hdl.handle.net/2027/uc1.31210023555590 URN:ISBN: |
| Idioma(s) |
eng |
| Publicador |
Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., |
| Direitos |
Items in this record are available as Public Domain, Google-digitized. View access and use profile at http://www.hathitrust.org/access_use#pd-google. Please see individual items for rights and use statements. |
| Palavras-Chave | #Thyristors. #Power semiconductors. #Silicon #Semiconductor doping, Neutron transmutation. |
| Tipo |
text |
