Permanent damage effects of nuclear radiation on the X-band performance of silicon Schottky-barrier microwave mixer diodes /


Autoria(s): Kenney, James M.; United States. Defense Nuclear Agency.; Institute for Applied Technology (U.S.). Electronic Technology Division.
Data(s)

04/02/1976

Resumo

S/N 003-003-01635-7.

Item 247.

Activity supported in cooperation with the Defense Nuclear Agency.

CODEN: XNBSAV.

Mode of access: Internet.

Formato

bib

bib

bib

Identificador

http://hdl.handle.net/2027/uiug.30112104131641

http://hdl.handle.net/2027/mdp.39015077586272

http://hdl.handle.net/2027/uc1.31210023556036

Idioma(s)

eng

Publicador

Washington : U.S. Dept. of Commerce, National Bureau of Standards, Institute for Applied Technology, Electronic Technology Division : For sale by the Supt. of Docs., U.S. Govt. Print. Off.,

Relação

Permanent damage effects of nuclear radiation on the X-band performance of silicon Schottky-barrier microwave mixer diodes.

Direitos

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Palavras-Chave #Microwave measurements. #Mixing circuits. #Diodes, Schottky-barrier
Tipo

text