Trial Test of a Bulk-Type Fully HTS Synchronous Motor

© 2013 IEEE. The world's first bulk-type fully high temperature superconducting synchronous motor (HTS-SM) was assembled and tested in our laboratory at the University of Cambridge. The fully HTS-SM was designed with 75 Y123 HTS bulks mounted on the surface of the rotor and six air core 2G HTS racetrack coils used for stator windings. We successfully applied a light fan load test for this fully HTS-SM at its operating temperature of 77 K. The detected decay of the trapped magnetic flux densities at the centre of the HTS bulks was up to 16.5% after 5 h of synchronous rotation. Due to the high current density of the HTS material, the ac stator field for the 2G HTS winding was 49.2% stronger compared with a comparable copper winding. In the meantime, we estimated that the efficiency was about 86% potentially under stable low frequency rotation at 150 r/min. The results show that the performance of this HTS motor is acceptable for practical applications.

A preliminary study on methods for retaining data quality problems in automatically generated test data

Data in an organisation often contains business secrets that organisations do not want to release. However, there are occasions when it is necessary for an organisation to release its data such as when outsourcing work or using the cloud for Data Quality (DQ) related tasks like data cleansing. Currently, there is no mechanism that allows organisations to release their data for DQ tasks while ensuring that it is suitably protected from releasing business related secrets. The aim of this paper is therefore to present our current progress on determining which methods are able to modify secret data and retain DQ problems. So far we have identified the ways in which data swapping and the SHA-2 hash function alterations methods can be used to preserve missing data, incorrectly formatted values, and domain violations DQ problems while minimising the risk of disclosing secrets. © (2012) by the AIS/ICIS Administrative Office All rights reserved.

The Chinese rare minnow (Gobiocypris rarus) as an in vivo model for endocrine disruption in freshwater teleosts: a full life-cycle test with diethylstilbestrol

Chinese rare minnow (Gobiocypris rarus), a freshwater teleost,. was exposed to diethylstilbestrol (DES) at 0.05, 0.5, 1 and 5 mug/L from fertilized eggs for up to mature period under flow-through condition. Several endpoints that related to development, reproductive fitness and transgenerational effects were evaluated. It was found that body length and body weight were significantly reduced and vitellogenin (Via) levels were significantly increased for fish exposed to DES. Histological examination showed that the sex ratios of F-0 fish skewed to female and about 2% of the fish exposed to 0.05 mug/L DES developed testes-ova. The reproductive success, as determined from data on egg production, was reduced in female fish exposed to 0.05, 0.5, 1 and 5 mug/L DES. The lowest-observed-effect concentrations (LOEC) for chances of sex ratios, reproductive success and histology alteration of F-0 are 0.05 mug/L. In the offspring, transgenerational effects on egg hatching rate. egg fertilization and Vtg levels of juvenile individuals were not observed. However. survival of F, generation fry significantly declined. The analysis of sex steroid levels revealed a significant decrease of testosterone (T) in the whole body homogenates (WBH) of male progeny and somewhat elevation of estradiol (E-T) in the WBH of female offspring. These findings indicate that exposure to DES causes a variety of developmental, reproductive and transgenerational effects. (C) 2004 Elsevier B.V. All rights reserved.

Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector

A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived.

Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mu m were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 +/- 47 and 201 +/- 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 +/- 0.88 and 3.16 +/- 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.

Choice of calibration equations in calibrating microwave test fixtures

The error theory of linear equation system has been applied to the calibration procedure of microwave network analyser in this article. A new explanation for the choice of the linear calibration equations is proposed and a general principle for choosing calibration equations is presented. The method can also be used to predict the occurrence of the problem of frequency limitation at some periodic frequencies. This principle is employed to the thru-short-delay (TSD) method and the solution using the chosen equations gives the most accurate results. A good agreement between the theory and the experiment has been obtained.

An improved TM method for full two-port calibration of the asymmetric test fixtures

Three known standards, including at least one transmission standard, are normally required for the full two-port calibration of test fixtures. Based on the triple-through method, a new general-purpose calibration procedure using only one known reflection standard is proposed in this paper. The experimental results show that our method call provide a simple and accurate approach to fall two-port calibration of the asymmetric test fixtures. (c) 2005 Wiley Periodicals, Inc.

Frequency limitation in the calibration of microwave test fixtures

The problem of frequency limitation arising from the calibration of asymmetric and symmetric test fixtures has been investigated. For asymmetric test fixtures, a new algorithm based on the thru-short-match (TSM) method is outlined. It is found that the conventional TSM method does not have any inherent frequency limitation, but using the same procedure with an unknown match may lead to the said problem. This limitation can be avoided by using a different algorithm. The various calibration methods for symmetric test fixtures using known standards are also discussed and the origin of the frequency limitation is identified. Several ways in avoiding the problem are proposed. There is good agreement between the theories and experimental data.

Two-port calibration of test fixtures with different test ports

The open-short-load (OSL) method is very simple and widely used for one-port test fixture calibration. In this paper, this method is extended, for the first time, to the two-port calibration of test fixtures with different test ports. The problem of phase uncertainty arising in this application has been solved. The comparison between our results and those obtained with the SOLT method shows that the method established is accurate for practical applications. (C) 2002 Wiley Periodicals, Inc.

New algorithms of the TSM and TOM methods for calibrating microwave test fixtures

Based on the conventional through-short-match (TSM) method, an improved TSM method has been proposed in this Letter. This method gives an analytical solution and has almost all the advantages of conventional TSM methods. For example, it has no phase uncertainty and no bandwidth limitation. The experimental results show that the accuracy can be significantly improved with this method. The proposed theory can be applied to the through-open-match (TOM) method. (C) 2002 Wiley Periodicals. Inc.

Phase uncertainty in calibrating microwave test fixtures

The problem of phase uncertainty arising in calibration of the test fixtures is investigated in this paper, It is shown that the problem exists no matter what kinds of calibration standards are used. It is also found that there is no need to determine the individual S-parameters of the test fixtures. In order to eliminate the problem of phase uncertainty, three different precise (known) reflection standards or one known reflection standard plus one known transmission standard should be used to calibrate symmetrical test fixtures. For the asymmetrical cases, three known standards, including at least one transmission standard, should be used. The thru-open-match (TOM) and thru-short-match (TSM) techniques are the simplest methods, and they have no bandwidth limitation. When the standards are imprecise (unknown), it is recommended to use any suitable technique, such as the thru-reflect-line, line-reflect-line, thru-short-delay, thru-open-delay,line-reflect-match, line-reflect-reflect-match, or multiline methods, to accurately determine the values of the required calibration terms and, in addition, to use the TOM or TSM method with the same imprecise standards to resolve the phase uncertainty.

Correlation of calibration equations for test fixtures

This paper begins from the thru-short-open (TSO) and thru-line-match (TLM) methods to investigate the correlation of the calibration equations of these two methods, The relations among the measurements with the corresponding standards are obtained. It is found that the line standard with zero length can be used instead of ideal open and short, in case that two test fixtures are symmetrical. For asymmetrical fixtures, the measurements with the standards line, open and short are related at certain frequencies, and the matched load can be replaced by the line standards. The relations established are used to test short and match standards and analyze the freqPuency limits of the TSO method, Good agreement between theory and experiment is obtained, It is found that the TSO method becomes very poor when the insertion phase of the thru standard is near n pi/4, and this method has a lower frequency limit. The TLM method is found unsuitable for calibrating asymmetrical fixtures.

Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test

Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus E-ps prestress s(0), and fracture strength s(max) of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates possess similar values of E-ps and s(0) but quite different values of s(max). The statistical analysis of fracture strengths were performed by Weibull distribution function and the fracture origins were further predicted.

Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes

The mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates were characterized using bulge testing combined with a refined load-deflection model for long rectangular membranes. Plane-strain modulus E-ps, prestress so, and fracture strength s(max) for 3C-SiC thin films with thickness of 0.40 mu m and 1.42 mu m were extracted. The E, values of SiC are strongly dependent on grain orientation. The thicker SIC film presents lower so than the thinner film due to stress relaxation. The s(max) values decrease with increasing film thickness. The statistical analysis of the fracture strength data were achieved by Weibull distribution function and the fracture origins were predicted.