Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test
Data(s) |
2008
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Resumo |
Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus E-ps prestress s(0), and fracture strength s(max) of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates possess similar values of E-ps and s(0) but quite different values of s(max). The statistical analysis of fracture strengths were performed by Weibull distribution function and the fracture origins were further predicted. Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus E-ps prestress s(0), and fracture strength s(max) of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates possess similar values of E-ps and s(0) but quite different values of s(max). The statistical analysis of fracture strengths were performed by Weibull distribution function and the fracture origins were further predicted. zhangdi于2010-03-09批量导入 Made available in DSpace on 2010-03-09T02:11:52Z (GMT). No. of bitstreams: 1 658.pdf: 274269 bytes, checksum: 05f2cdc1d7fd9796eed2df6740c161aa (MD5) Previous issue date: 2008 IEEE.; State Key Lab Multi Spectral Informat Proc Technol.; Chinese Soc Micro Nano Technol.; Ctr Micro & Nano Syst.; IEEE Nanotechnol Council.; Shenyang Inst Automat.; Univ California.; UCLA, Ctr Cell Control.; Global Engn Technol Inst.; Nanosurf AG, Smart Instruments Nanosci & Nanotechnol.; US Army Int Technol Ctr, Pacific. [Zhou, Wei; Yang, Jinling; Li, Yan; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China IEEE.; State Key Lab Multi Spectral Informat Proc Technol.; Chinese Soc Micro Nano Technol.; Ctr Micro & Nano Syst.; IEEE Nanotechnol Council.; Shenyang Inst Automat.; Univ California.; UCLA, Ctr Cell Control.; Global Engn Technol Inst.; Nanosurf AG, Smart Instruments Nanosci & Nanotechnol.; US Army Int Technol Ctr, Pacific. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
Fonte |
Zhou, W ; Yang, JL ; Li, Y ; Yang, FH .Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test .见:IEEE .2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2008,VOLS 1-3: 253-256 |
Palavras-Chave | #微电子学 #bulge test #fracture property #silicon nitride #Weibull distribution function |
Tipo |
会议论文 |