Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector


Autoria(s): Zhao DG; Jiang DS; Zhu JJ; Wang; H; Liu ZS; Zhang SM; Yang H
Data(s)

2010

Resumo

A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived.

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National Natural Science Foundation of China 10990100 60836003 60776047;National Science Fund for Distinguished Young Scholars 60925017;National Basic Research Program of China 2007CB936700;National High Technology Research and Development Program of China 2007AA03Z401

其它

National Natural Science Foundation of China 10990100 60836003 60776047;National Science Fund for Distinguished Young Scholars 60925017;National Basic Research Program of China 2007CB936700;National High Technology Research and Development Program of China 2007AA03Z401

Identificador

http://ir.semi.ac.cn/handle/172111/11142

http://www.irgrid.ac.cn/handle/1471x/60774

Idioma(s)

英语

Fonte

Zhao DG, Jiang DS, Zhu JJ, Wang, H, Liu ZS, Zhang SM, Yang H.Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector.: JOURNAL OF ALLOYS AND COMPOUNDS,2010,492(1-2):300-302

Palavras-Chave #光电子学 #Nitride materials #Photoconductivity and photovoltaics #Computer simulations #FILMS
Tipo

期刊论文