Self-organized InAs quantum wires on GaAs (331)A substrates

Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires

Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.

Surface morphology evolution of strained InAs/GaAs(331)a films

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

8×8重排无阻塞型SOI热光波导开关阵列

设计并制作了一种重排无阻塞型的8×8 SOI热光波导开关阵列。开关单元采用了MM I-MZI结构的2×2光开关。整个器件的开关时间约为2μs。器件中开关单元功耗小于240mW。消光比在17~22dB范围内变化。功耗和开关速度都明显优于SiO2基和聚合物基的开关阵列。

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

GaAs(331)A面InAs自组织纳米结构形貌演化

采用分子束外延方法在CaAs(331)A高指数衬底上制备自对齐InAs纳米线(QWRs)或者三维(3D)岛状结构.InAs纳米线(QWRs)选择性生长在CaAs层的台阶边缘.通过原子力显微镜(AfM)仔细研究了InAs纳米微结构的表面形貌,发现不同的生长条件,包括:衬底温度、生长速率、和InAs层厚度等,对InAa表面形貌有很大的影响.如,低温更容易导致线状纳米微结构的形成,而高温更利于3D岛状结构形成.表面形貌的转变归结于表面能同应变能之间的竞争.

光互连用8×8多量子阱空间空调制器

制作了光互连用8×8多量子阱空间光调制器，测量了其耐压特性、模式均匀性、对比度和插入损耗等。使用Dammann光栅分束器将半导体激光束分成等光强的64路并将其照射到多量子阱空间光调制器上，测量了其调制特性。

静压下GaAs1—xPx：N（x≤0.88）中N等电子陷阱的束缚激子发光

国家自然科学基金

中子数 N=50核~(88)Sr的高自旋态

在用８２Ｓｅ束流和天然 Ｂａ靶之间的深部非弹反应研究类靶余核激发态时，Ｂａ靶严重氧化，８８Ｓｒ的激发态由１６Ｏ与８２Ｓｅ之间的融合蒸发反应产生．通过在束γ谱学方法测量了８８ Ｓｒ的退激 γ射线，提取了γ跃迁的 ＤＣＯ系数和角分布各向异性因子，对所有能级进行了自旋指定．在已知能级之上观测到了两个高自旋能级结构，自旋、激发能分别达到１３ｈ，８５２０ｋｅＶ和１２ｈ，７９０９ｋｅＶ．根据能级衰变特征和邻近Ｎ＝５０同中子素的能级结构系统性，对高自旋态的组态进行了讨论．

8×8单元CsI(Tl)探测阵列研制；Development of 88 CsI(Tl) array detector

描述了1个8×8单元CsI(Tl)探测阵列的结构和工作原理。探测阵列的每个单元是由1块前表面21 mm×21 mm、后表面23.1 mm×23.1 mm、高50 mm的CsI(Tl)棱台、1块光导和光电倍增管组成。在兰州放射性次级束流线(RIBLL)上对探测阵列进行测试,得到探测阵列对30 MeV质子的能量分辨可达2.7%,对170 MeV7Be可达1.5%,可很好地用于放射性束物理实验中带电粒子的鉴别。

8×8单元CsI(Tl)阵列探测器的研制

近二十年，世界上各大实验室相继建立了各具特色的放射性束流装置，放射性束物理得到了长足的发展，在实验上要求对反应产物进行全运动学测量且具有较高的精度，为实验探测装置提出了更高的要求。我们研制了8×8单元CsI(Tl)阵列探测器，主要用于测量核反应产物的能量和角分布、进行粒子的关联测量以及对粒子的鉴别。脉冲形状甄别（PSD）技术是一种重要的鉴别粒子的方法，已经从原来直接利用电子学硬件的方法发展到先采集到脉冲波形，进而进行离线分析，甚至利用现代数字信号处理(DSP)技术的在线分析。我们对该技术进行了一些初步的研究，为以后利用DSP技术研制PSD系统奠定了重要的基础。本论文工作的主要内容有：（1）探测器的研制和性能测试。该探测器由64块CsI(Tl)晶体组成,每块晶体由光电倍增管单独读出。该探测器覆盖较大的立体角，具有较好的能量分辨和粒子鉴别能力。本文对探测器的探测原理，结构及性能进行较详细的说明。（2）系统地对两部分比较法(Qfast/Qslow，Qfast/Qtotal，Qslow/Qtotal)进行了模拟计算，定性的分析了两部分的积分门的延迟和宽度，为实验提供了有效的指导。分别采集到α源和宇宙线(m子)两种脉冲波形，使用两部分比较、平均时间、确定幅度和确定时间四种方法进行离线分析，对四种分析方法进行比较，以选择甄别效果最好的分析方法。最后，对关于进一步工作的方向进行了简要的讨论

Identification and characterization of a myeloid differentiation factor 88 (MyD88) cDNA from Zhikong scallop Chlamys farreri

Myeloid differentiation factor 88 (MyD88) is a universal and essential adapter for the TLR/IL-1R family. In this report, the first mollusk Myd88 ortholog (named as CfMyd88) was cloned from Zhikong scallop (Chlamys farreri). The full-length cDNA of CfMyd88 was of 1554 bp, including a 5 '-terminal untranslated region (UTR) of 427 bp, a polyA tail, and an open reading frame (ORF) of 1104 bp encoding a polypeptide of 367 amino acids containing the typical TLR and IL-1R-related (TIR) domain and death domain (DD). Homology analysis revealed that the predicted amino acid sequence of CfMyd88 was homologous to a variety of previously identified Myd88s with more than 30% identity. The temporal expressions of CfMyd88 mRNA in the mixed primary cultured haemocytes stimulated by lipopolysaccharide (LPS) and peptidoglycans (PGN) were measured by real-time RT-PCR system. The mRNA expression of CfMyd88 decreased after stimulation with both LPS and PGN, and the lowest level was about 1/3 times (at 6 h) and 1/10 times (at 9 h) to that in the control group, respectively. The expression then recovered and was upregulated to two-fold at 9 h after LPS stimulation or to the original level at 12 It after PGN stimulation. The results suggest that the MyD88-dependent signaling pathway exists in scallop and was involved in the defense system. (c) 2007 Elsevier Ltd. All rights reserved.