Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)


Autoria(s): NIU Zhihong; REN Zhengwei; HE Zhenhong
Data(s)

2008

Resumo

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

Supported by National Natural Science Foundation of China(6 176 6)

Identificador

http://ir.semi.ac.cn/handle/172111/16037

http://www.irgrid.ac.cn/handle/1471x/102057

Idioma(s)

英语

Fonte

NIU Zhihong;REN Zhengwei;HE Zhenhong.Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE),光子学报,2008,37(6):1107-1111

Palavras-Chave #半导体物理
Tipo

期刊论文