Surface morphology evolution of strained InAs/GaAs(331)a films


Autoria(s): Gong, M (Gong, Meng); Fang, ZD (Fang, Zhidan); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan)
Data(s)

2006

Resumo

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

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Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

Identificador

http://ir.semi.ac.cn/handle/172111/9820

http://www.irgrid.ac.cn/handle/1471x/65911

Idioma(s)

英语

Publicador

WORLD SCIENTIFIC PUBL CO PTE LTD

PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE

Fonte

Gong, M (Gong, Meng); Fang, ZD (Fang, Zhidan); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) .Surface morphology evolution of strained InAs/GaAs(331)a films .见:WORLD SCIENTIFIC PUBL CO PTE LTD .International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series ,PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE ,2006,Vol 5 No 6 5 (6): 883-888

Palavras-Chave #半导体物理 #surface morphology evolution #InAs nanostructures #island-pit pairs #MOLECULAR-BEAM EPITAXY #QUANTUM DOTS #COOPERATIVE NUCLEATION #HETEROEPITAXY #TRANSITION #ISLANDS #GROWTH
Tipo

会议论文