GaP∶NLPE片的纵向载流子浓度分布

于2010-11-23批量导入

GS-MBE生长的GaP/Si的XPS研究

利用X射线光电子能谱(XPS)深度剖析方法对气体源分子束外延(GS-MBE)生长的GaP/Si异质结构进行了详细的分析。其结果表明

Ni＋注入n-GaP DLTS谱中Ni杂质能级的识别

在不同条件下退火的Ni~+注入n-GaP DLTS谱中观测到表观激活能在0.60～0.70eV范围内的多个多子峰和少子峰。对各样品掺杂层内的能带弯曲及Ni杂质各荷电状态浓度空间分布在DLTS测量的零偏-反偏过程中的变化进行了计算。结合分析实测各能级热发射率数据,对其中起源于Ni_(Ga)中心的DLTS峰作出了判断。

GaAs/GaP界面的X射线掠入射衍射分析

用掠入射全反射X射线衍射,结合常规X射线衍射,对GaAs/GaP应变层界面进行了研究,给出了界面失配度、薄膜晶胞的畸变和界面弛豫等结构参数。结果表明掠入射衍射(GID)是测定半导体薄外延膜界面结构的有效工具。

MBE GaAs/GaP（001）异质外延层结构参数的X射线双晶衍射研究

于2010-11-23批量导入

A study on GaP/Si heterostructures grown by GS-MBE

GaP/Si is a promoting heterostructure for Si-based optoelectronic devices since lattice constants of GaP and Si are so closed that they can match with each other. GaP was successfully grow on (100) Si subtracts by Gas-Source Molecular Bean Epitaxy (GS-MBE) in the study. The GaP/Si heterostructure was characterized by X-ray double crystal diffraction, Anger electron spectrograph, X-ray photonic spectrograph and photoluminescence (PL) measurements. The results showed that the epitaxial GaP layers are single crystalline, in which a parallel to and a (perpendicular to)are 0.54322 and 0.54625 nm, respectively. The peaks in PL spectra of GaP epitaxial layer grown on Si are 650, 627 and 640 nm, respectively. The study demonstrated that GaP/Si is a kind of lattice matched heterostructures and will be a promoting materials for future integrated photonics.

Study on optical band gap of boron-doped nc-Si : H film

The optical band gap (E-g) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the E-g was evaluated utilizing three different relations for comparison, namely: alphahnu=C(hnu-E-g)(3), alphahnu=B-0(hnu-E-g)(2), alphahnu=C-0(hnu-E-g)(2). Result showed that E-g decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (T-s), respectively. E-g raises up with rf power density (P-d) from 0.45W.cm(-2) to 0.60w.cm(-2) and then drops to the end. These can be explained for E-g decreases with disorder in the films.

Nucleon 3PF2 Superfluid Pairing Gap in Asymmetry Nuclear Matter

The 3PF2 superfluidity of neutron and proton is investigated in isospin-asymmetric nuclear matter within the Brueckner–Hartree–Fock approach and the BCS theory by adopting the Argonne V14 and the Argonne V18 nucleon-nucleon interactions. We find that pairing gaps in the 3PF2 channel predicted by adopting the AV14 interaction are much larger than those by the AV18 interaction. As the isospin-asymmetry increases, the neutron 3PF2 superfluidity is found to increase rapidly, whereas the proton one turns out to decrease and may even vanish at high enough asymmetries.As a consequence, the neutron 3PF2 superfluidity is much stronger than the proton one at high asymmetries and it predominates over the proton one in dense neutron-rich matter.

Topological objects in two-gap superconductor

We discuss the non-Abelian topological objects, in particular the non-Abrikosov vortex and the magnetic knot made of the twisted non-Abrikosov vortex, in two-gap superconductor. We show that there are two types of non-Abrikosov vortex in Ginzburg-Landau theory of two-gap superconductor, the D-type which has no concentration of the condensate at the core and the N-type which has a non-trivial profile of the condensate at the core, under a wide class of realistic interaction potential. We prove that these non-Abrikosov vortices can have either integral or fractional magnetic flux, depending on the interaction potential. We show that they are described by the non-Abelian topology pi(2)(S-2) and pi(1)(S-1), in addition to the well-known Abelian topology pi(1)(S-1). Furthermore, we discuss the possibility to construct a stable magnetic knot in two-gap superconductor by twisting the non-Abrikosov vortex and connecting two periodic ends together, whose knot topology pi(3)(S-2) is described by the Chern-Simon index of the electromagnetic potential. We argue that similar topological objects may exist in multi-gap or multi-layer superconductors and multi-component Bose-Einstein condensates and superfluids, and discuss how these topological objects can be constructed in MgB2, Sr2RuO4, He-3, and liquid metallic hydrogen.

Topological solitons in the CPN model

We investigate the solitons in the CPN supercript stop model in terms of the decomposition of gauge potential. Based on the phi-mapping topological current theory, the charge and position of solitons is determined by the properties of the typical component. Furthermore, the motion and the bifurcation of multi-soliton is discussed. And the knotted solitons in high dimension is explored also.

Topological structure of the solitons solution in SU(3) Dunne-Jackiw-Pi-Trugenberger model

By using phi-mapping topological current theory and gauge potential decomposition, we discuss the self-dual equation and its solution in the SU(N) Dunne-Jackiw-Pi-Trugenberger model and obtain a new concrete self-dual equation with a 6 function. For the SU(3) case, we obtain a new self-duality solution and find the relationship between the soliton solution and topological number which is determined by the Hopf index and Brouwer degree of phi-mapping. In our solution, the flux of this soliton is naturally quantized.

bridge the gap between software test process and business value: a case study

Chinese Academy of Sciences (ISCAS)

Band Gap Tunable, Donor-Acceptor-Donor Charge-Transfer Heteroquinoid-Based Chromophores: Near Infrared Photoluminescence and Electroluminescence

A series of D-pi-A-pi-D type of near-infrared (NIR) fluorescent compounds based on benzobis(thia diazole) and its selenium analogues were synthesized and fully characterized by H-1 and C-13 NMR, high-resolution mass spectrometry, and elemental analysis. The absorption fluorescence, and electrochemical properties were also studied. Photoluminescence of these chromophores ranges from 900 to 1600 nm and their band gaps are between 1.19 and 0.56 eV.