Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method

In the case of quantum wells, the indium segregation leads to complex potential profiles that are hardly considered in the majority of the theoretical models. The authors demonstrated that the split-operator method is useful tool for obtaining the electronic properties in these cases. Particularly, they studied the influence of the indium surface segregation in optical properties of InGaAs/GaAs quantum wells. Photoluminescence measurements were carried out for a set of InGaAs/GaAs quantum wells and compared to the results obtained theoretically via split-operator method, showing a good agreement.

Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction

An x-ray diffraction method, based on the excitation of a surface diffracted wave, is described to investigate the capping process of InAs/GaAs (001) quantum dots (QDs). It is sensitive to the tiny misorientation of (111) planes at the surface of the buffer layer on samples with exposed QDs. After capping, the misorientation occurs in the cap-layer lattice faceting the QDs and its magnitude can be as large as 10 degrees depending on the QDs growth rates, probably due to changes in the size and shape of the QDs. A slow strain release process taking place at room temperature has also been observed by monitoring the misorientation angle of the (111) planes.

Spin-Orbit Coupling in n-Type PbTe/PbEuTe Quantum Wells

Magnetoresistance measurements were performed on an n-type PbTe/PbEuTe quantum well and weak antilocalization effects were observed. This indicates the presence of spin orbit coupling phenomena and we showed that the Rashba effect is the main mechanism responsible for this spin orbit coupling. Using the model developed by Iordanskii et al., we fitted the experimental curves and obtained the inelastic and spin orbit scattering times. Thus we could compare the zero field energy spin-splitting predicted by the Rashba theory with the energy spin-splitting obtained from the analysis of the experimental curves. The final result confirms the theoretical prediction of strong Rashba effect on IV-VI based quantum wells.

Transport in disordered two-dimensional topological insulators

The transport properties of the ""inverted"" semiconductor HgTe-based quantum well, recently shown to be a two-dimensional topological insulator, are studied experimentally in the diffusive regime. Nonlocal transport measurements are performed in the absence of magnetic field, and a large signal due to the edge states is observed. This shows that the edge states can propagate over a long distance, similar to 1 mm, and therefore, there is no difference between local and nonlocal electrical measurements in a topological insulator. In the presence of an in-plane magnetic field a strong decrease of the local resistance and complete suppression of the nonlocal resistance is observed. We attribute this behavior to an in-plane magnetic-field-induced transition from the topological insulator state to a conventional bulk metal state.

Magnetoresistance oscillations in multilayer systems: Triple quantum wells

Magnetoresistance of two-dimensional electron systems with several occupied subbands oscillates owing to periodic modulation of the probability of intersubband transitions by the quantizing magnetic field. In addition to previous investigations of these magnetointersubband (MIS) oscillations in two-subband systems, we report on both experimental and theoretical studies of such a phenomenon in three-subband systems realized in triple quantum wells. We show that the presence of more than two subbands leads to a qualitatively different MIS oscillation picture, described as a superposition of several oscillating contributions. Under a continuous microwave irradiation, the magnetoresistance of triple-well systems exhibits an interference of MIS oscillations and microwave-induced resistance oscillations. The theory explaining these phenomena is presented in the general form, valid for an arbitrary number of subbands. A comparison of theory and experiment allows us to extract temperature dependence of quantum lifetime of electrons and to confirm the applicability of the inelastic mechanism of microwave photoresistance for the description of magnetotransport in multilayer systems.

Classical and quantum magnetoresistance in a two-subband electron system

We observe a large positive magnetoresistance in a bilayer electron system (double quantum well) as the latter is driven by the external gate from double to single layer configuration. Both classical and quantum contributions to magnetotransport are found to be important for explanation of this effect. We demonstrate that these contributions can be separated experimentally by studying the magnetic-field dependence of the resistance at different gate voltages. The experimental results are analyzed and described by using the theory of low-field magnetotransport in the systems with two occupied subbands.

Approximation to density functional theory for the calculation of band gaps of semiconductors

The local-density approximation (LDA) together with the half occupation (transitionstate) is notoriously successful in the calculation of atomic ionization potentials. When it comes to extended systems, such as a semiconductor infinite system, it has been very difficult to find a way to half ionize because the hole tends to be infinitely extended (a Bloch wave). The answer to this problem lies in the LDA formalism itself. One proves that the half occupation is equivalent to introducing the hole self-energy (electrostatic and exchange correlation) into the Schrodinger equation. The argument then becomes simple: The eigenvalue minus the self-energy has to be minimized because the atom has a minimal energy. Then one simply proves that the hole is localized, not infinitely extended, because it must have maximal self-energy. Then one also arrives at an equation similar to the self- interaction correction equation, but corrected for the removal of just 1/2 electron. Applied to the calculation of band gaps and effective masses, we use the self- energy calculated in atoms and attain a precision similar to that of GW, but with the great advantage that it requires no more computational effort than standard LDA.

Linear and nonlinear transport in a small charge-tunable open quantum ring

We experimentally study the Aharonov-Bohm-conductance oscillations under external gate voltage in a semiconductor quantum ring with a radius of 80 nm. We find that, in the linear regime, the resistance-oscillation plot in the voltage-magnetic-field plane corresponds to the quantum ring energy spectra. The chessboard pattern assembled by resistance diamonds, while loading the ring, is attributed to a short electron lifetime in the open configuration, which agrees with calculations within the single-particle model. Remarkably, the application of a small dc current allows observing strong deviations in the oscillation plot from this pattern accompanied by a magnetic-field symmetry break. We relate such behavior to the higher-order-conductance coefficients determined by electron-electron interactions in the nonlinear regime.

Quantum confinement effects on Mn-doped InAs nanocrystals: A first-principles study

We studied the effect of quantum confinement in Mn-doped InAs nanocrystals using theoretical methods. We observe that the stability of the impurities decreases with the size of the nanocrystals, making doping more difficult in small nanoparticles. Substitutional impurities are always more stable than interstitial ones, independent of the size of the nanocrystal. There is also a decrease in the energy difference between the high and low spin configurations, indicating that the critical temperature should decrease with the size of the nanoparticles, in agreement with experimental observations and in detriment to the development of functional spintronic devices with doped nanocrystals. Codoping with acceptors or saturating the nanocrystals with molecules that insert partially empty levels in the energy gap should be an efficient way to increase T(C).

Carrier transfer in the optical recombination of quantum dots

We report a study of dynamic effects detected in the time-resolved emission from quantum dot ensembles. Experimental procedures were developed to search for common behaviors found in quantum dot systems independently of their composition: three quantum dot samples were experimentally characterized. Systems with contrasting interdot coupling are compared and their sensitivity to the excitation energy is analyzed. Our experimental results are compared and contrasted with other results available in literature. The optical recombination time dependence on system parameters is derived and compared to the experimental findings. We discuss the effects of occupation of the ground state in both valence and conduction bands of semiconductor quantum dots in the dynamics of the system relaxation as well as the nonlinear effects.

Contrasting LH-HH subband splitting of strained quantum wells grown along [001] and [113] directions

Contrasting responses for the temperature tuning of the electronic structure in semiconductor quantum wells are discussed for heterolayered structures grown along (001) and (113) directions. The temperature affects the strain modulation of the deformation potentials and the effective optical gap is tuned along with the intersub-band splitting in the valence band. A multiband theoretical model accounts for the characterization of the electronic structure, highlighting the main qualitative and quantitative differences between the two systems under study. The microscopic source of strain fields and the detailed mapping of their distribution are provided by a simulation using classical molecular-dynamics technics.

A study of disorder effects in random (Al(x)Ga(1-x)As)(n)(Al(y)Ga(1-y)As)(m) superlattices embedded in a wide parabolic potential

A photoluminescence (PL) study of the individual electron states localized in a random potential is performed in artificially disordered superlattices embedded in a wide parabolic well. The valence band bowing of the parabolic potential provides a variation of the emission energies which splits the optical transitions corresponding to different wells within the random potential. The blueshift of the PL lines emitted by individual random wells, observed with increasing disorder strength, is demonstrated. The variation of temperature and magnetic field allowed for the behavior of the electrons localized in individual wells of the random potential to be distinguished.

Semiconducting Sn(3)O(4) nanobelts: Growth and electronic structure

The study of structures based on nonstoichiometric SnO(2-x) compounds, besides experimentally observed, is a challenging task taking into account their instabilities. In this paper, we report on single crystal Sn(3)O(4) nanobelts, which were successfully grown by a carbothermal evaporation process of SnO(2) powder in association with the well known vapor-solid mechanism. By combining the structural data and transport properties, the samples were investigated. The results showed a triclinic semiconductor structure with a fundamental gap of 2.9 eV. The semiconductor behavior was confirmed by the electron transport data, which pointed to the variable range hopping process as the main conduction mechanism, thus giving consistent support to the mechanisms underlying the observed semiconducting character.

Atomic scale characterization of Mn doped InAs/GaAs quantum dots

Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent segregation makes it difficult to incorporate Mn in the QDs even at low growth temperatures of T=320 degrees C and high Mn fluxes. Mn atoms in and around QDs have been observed with strain and potential confinement changing the appearance of the Mn features.

Structural and optical analysis of GaAsP/GaP core-shell nanowires

The structural and optical properties of GaAsP/GaP core-shell nanowires grown by gas source molecular beam epitaxy were investigated by transmission electron microscopy, Raman spectroscopy, photoluminescence (PL), and magneto-PL. The effects of surface depletion and compositional variations in the ternary alloy manifested as a redshift in GaAsP PL upon surface passivation, and a decrease in redshift in PL in the presence of a magnetic field due to spatial confinement of carriers.