Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
18/04/2012
18/04/2012
2010
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| Resumo |
In the case of quantum wells, the indium segregation leads to complex potential profiles that are hardly considered in the majority of the theoretical models. The authors demonstrated that the split-operator method is useful tool for obtaining the electronic properties in these cases. Particularly, they studied the influence of the indium surface segregation in optical properties of InGaAs/GaAs quantum wells. Photoluminescence measurements were carried out for a set of InGaAs/GaAs quantum wells and compared to the results obtained theoretically via split-operator method, showing a good agreement. Fundacao de Amparo Pesquisa do Estado de Sao Paulo (FAPESP) Conselho Nacional de Pesquisa (CNPq) Universidade Sao Judas Tadeu |
| Identificador |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.28, n.2, p.277-283, 2010 1071-1023 http://producao.usp.br/handle/BDPI/16011 10.1116/1.3301612 |
| Idioma(s) |
eng |
| Publicador |
A V S AMER INST PHYSICS |
| Relação |
Journal of Vacuum Science & Technology B |
| Direitos |
openAccess Copyright A V S AMER INST PHYSICS |
| Palavras-Chave | #gallium arsenide #III-V semiconductors #indium compounds #optical properties #photoluminescence #semiconductor quantum wells #surface segregation #MOLECULAR-BEAM-EPITAXY #TRANSMISSION ELECTRON-MICROSCOPY #X-RAY-DIFFRACTION #SURFACE SEGREGATION #TUNNELING-MICROSCOPY #HETEROSTRUCTURES #INTERFACE #GAAS #SUPERLATTICES #GAAS(001) #Engineering, Electrical & Electronic #Nanoscience & Nanotechnology #Physics, Applied |
| Tipo |
article original article publishedVersion |
